NSVMUN5316DW1T1G The ON Semiconductor NSVMUN5316DW1T1G is a dual pre-biased transistor featuring both NPN and PNP configurations. It offers a 50V collector-emitter voltage and 100mA continuous collector current.
Mfr Part #:

NSVMUN5316DW1T1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NSVMUN5316DW1T1G is a dual pre-biased transistor featuring both NPN and PNP configurations. It offers a 50V collector-emitter voltage and 100mA continuous collector current.
Total Stock: 159,000 pcs
$ Price Range: $0.99

NSVMUN5316DW1T1G Available from 1 distributor

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NSVMUN5316DW1T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
IC (Maximum)
Input Forward Voltage
Junction Temperature Range
Mounting Type
PD (Maximum @ TA = 25 °C (Note 1)
Pb-Free
Power
Resistor
Standard Package Qty
Storage Temperature Range
Supplier Device Package
Transistor Type
VCEO (Maximum)
VIN(rev) (Maximum @ NPN)
VIN(rev) (Maximum @ PNP)
Vce Saturation (Max) @ Ib, Ic
Voltage

NSVMUN5316DW1T1G Description

Short technical summary and product information.

The ON Semiconductor NSVMUN5316DW1T1G is a digital transistor designed to replace a single device and its external resistor bias network. It integrates an NPN and a PNP transistor with monolithic bias resistors, simplifying circuit design and reducing board space.

 

This device features a collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 100mA. It includes a pre-biased resistor network with a typical R1 value of 4.7kΩ. The transistor type is dual, comprising one NPN and one PNP transistor.

 

The NSVMUN5316DW1T1G is supplied in a SOT-363 package, also known as SC-88 or SC-70-6, suitable for surface mounting. It is Pb-free and Halogen-free, complying with RoHS standards.

 

Key electrical characteristics include a DC current gain (hFE) of 160 (min) at 5mA/10V and a Vce saturation of 250mV (max) at 300µA/10mA. The device operates within a junction temperature range of -55°C to +150°C.

NSVMUN5316DW1T1G Quick Information

Product Type: Dual Pre-Biased Transistor
Canonical Name: Dual Pre-Biased NPN/PNP Transistor
Subcategory: Transistors

NSVMUN5316DW1T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSVMUN5316DW1T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSVMUN5316DW1T1G Features

  • Dual NPN and PNP transistor configuration.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Integrated 4.7kΩ bias resistor.
  • Surface mount SOT-363 package.

NSVMUN5316DW1T1G Applications

  • Simplifies circuit design and reduces board space.
  • Replaces single transistor and external resistors.
  • Suitable for digital logic applications.
  • Used in compact electronic assemblies.

NSVMUN5316DW1T1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage for the NSVMUN5316DW1T1G?

The collector-emitter voltage (VCEO) for the NSVMUN5316DW1T1G is 50 Vdc.

What is the continuous collector current rating?

The continuous collector current (IC) rating for this device is 100 mAdc.

What package type is the NSVMUN5316DW1T1G supplied in?

The NSVMUN5316DW1T1G is supplied in a SOT-363 package.

What is the RoHS status of this component?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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