| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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80,000 pcs
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80000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Halogen Free | |
| Mounting Type | |
| Power | |
| Resistor | |
| Supplier Device Package | |
| Tape & Reel | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NSVMUN531335DW1T3G from On Semiconductor is a Bias Resistor Transistor (BRT) designed to simplify circuit design by integrating a single transistor with a monolithic bias network. This device contains NPN and PNP transistors, each with a series base resistor and a base-emitter resistor, eliminating the need for external components and reducing board space and component count.
Key electrical specifications include a collector-emitter voltage of 50V for both NPN and PNP types, and a continuous collector current of 100mA. The NPN transistor has an input forward voltage of 40V and an input reverse voltage of 10V, while the PNP transistor has an input forward voltage of 12V and an input reverse voltage of 5V. The device features integrated resistors with values of 47kΩ for the NPN base resistor (R1) and base-emitter resistor (R2), and 2.2kΩ for the PNP base resistor (R1) and 47kΩ for the base-emitter resistor (R2).
This transistor is housed in a compact SOT-363 (SC-88/SC70-6) surface-mount package. It is qualified to AEC-Q101 standards and is suitable for automotive applications requiring unique site and control change requirements. The device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
With a power dissipation of 385mW at 25°C (both junctions heated), the NSVMUN531335DW1T3G is designed for various digital applications where component reduction and simplified design are beneficial.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage is 50V for both NPN and PNP types.
The continuous collector current is 100mA.
This transistor is supplied in a SOT-363 package.
The NPN transistor has integrated resistors of 47kΩ (R1) and 47kΩ (R2). The PNP transistor has integrated resistors of 2.2kΩ (R1) and 47kΩ (R2).
Yes, this device is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.