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NSVMUN5312DW1T2G The NSVMUN5312DW1T2G is a dual NPN and PNP pre-biased transistor from ON Semiconductor. It features a 50V collector-emitter voltage and 100mA continuous collector current.
Mfr Part #:

NSVMUN5312DW1T2G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NSVMUN5312DW1T2G is a dual NPN and PNP pre-biased transistor from ON Semiconductor. It features a 50V collector-emitter voltage and 100mA continuous collector current.
✓ Total Stock: 1,000 pcs
$ Price Range: $0.99

NSVMUN5312DW1T2G Available from 1 distributor

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✓ Non-Authorised
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Braun Electronic Components ✓
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1,000 pcs
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1000 pcs On Request 1 On Request On Request On Request On Request On Request
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NSVMUN5312DW1T2G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Supplier Device Package
Supplier Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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NSVMUN5312DW1T2G Description

Short technical summary and product information.

The ON Semiconductor NSVMUN5312DW1T2G is a complementary bias resistor transistor (BRT) designed to simplify circuit design by integrating NPN and PNP transistors with monolithic bias resistors. This device replaces a single transistor and its external bias network, reducing component count and board space.

 

Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 100mA. It incorporates internal resistors with a typical value of 22kΩ. The transistor type is dual, comprising one NPN and one PNP transistor, both pre-biased.

 

This component is supplied in an SC-88/SC70-6/SOT-363 package, suitable for surface mount applications. The device is RoHS3 compliant, indicating adherence to environmental standards. Its integrated design makes it suitable for various digital logic applications where space and component reduction are critical.

 

Features like simplified circuit design, reduced board space, and reduced component count are inherent to its design. The device is also Pb-Free and Halogen Free/BFR Free, aligning with environmental regulations.

NSVMUN5312DW1T2G Quick Information

Product Type: Transistor
Canonical Name: NPN/PNP Dual Pre-Biased Transistor
Subcategory: Pre-Biased Transistor Array

NSVMUN5312DW1T2G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSVMUN5312DW1T2G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSVMUN5312DW1T2G Features

  • Dual NPN and PNP transistors integrated.
  • Features 50V collector-emitter voltage.
  • Continuous collector current is 100mA.
  • Includes 22kΩ internal resistors.
  • Surface mount SC-88/SOT-363 package.

NSVMUN5312DW1T2G Applications

  • Ideal for digital logic circuits.
  • Simplifies interface circuit designs.
  • Reduces component count on PCBs.
  • Suitable for space-constrained applications.

NSVMUN5312DW1T2G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NSVMUN5312DW1T2G?

The maximum collector-emitter voltage is 50 Vdc.

What is the continuous collector current rating?

The continuous collector current is 100 mAdc.

What is the typical resistance value of the internal resistors?

The internal resistors have a typical value of 22kΩ.

What package type is the NSVMUN5312DW1T2G supplied in?

It is supplied in an SC-88/SC70-6/SOT-363 package.

Is the NSVMUN5312DW1T2G RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1 Unlimited.

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