| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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87,600 pcs
|
87600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Resistor | |
| Supplier Device Package | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The On Semiconductor NSVMUN5234T1G is a single, pre-biased NPN bipolar junction transistor (BJT) suitable for discrete semiconductor applications. This component features a maximum voltage rating of 50V and can handle a continuous current of up to 100mA, with a power dissipation of 200mW.
Key electrical characteristics include a minimum DC current gain (hFE) of 80 at 5mA and 10V, and a Vce saturation of 250mV maximum at 1mA and 10mA. It incorporates a 47 kΩ resistor, simplifying circuit design. The transistor type is NPN - Pre-Biased, indicating its integrated biasing resistor.
Designed for surface mounting, the NSVMUN5234T1G comes in an SC-70 (SOT-323) package, making it suitable for space-constrained applications. Its robust specifications make it a reliable choice for signal switching and amplification tasks in electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NSVMUN5234T1G transistor has a maximum voltage rating of 50V.
The NSVMUN5234T1G can handle a maximum continuous current of 100mA.
The NSVMUN5234T1G has a power dissipation of 200mW.
The NSVMUN5234T1G includes an integrated resistor with a value of 47 kΩ.
The NSVMUN5234T1G is available in an SC-70 (SOT-323) package.
The NSVMUN5234T1G is a surface mount device.