| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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93,000 pcs
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93000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NSVMUN5216T1G is a single, pre-biased NPN bipolar transistor manufactured by ON Semiconductor. It is designed for surface mount applications and comes in a SC-70-3 (SOT323) package.
Key electrical specifications include a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It has a base resistor (R1) of 4.7 kΩ and a Vce saturation voltage of 250mV at 1mA collector current and 10mA base current. The minimum DC current gain (hFE) is 160 at 5mA collector current and 10V Vce.
This transistor is suitable for various electronic circuits requiring a pre-biased bipolar transistor. Its surface mount package makes it ideal for compact designs where space is a constraint.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (Ic) for the NSVMUN5216T1G is 100 mA.
The collector-emitter breakdown voltage (Vce) for the NSVMUN5216T1G is 50 V.
The base resistor (R1) for the NSVMUN5216T1G is 4.7 kΩ.
The Vce saturation voltage is 250mV at 1mA collector current and 10mA base current.
The minimum DC current gain (hFE) is 160 at 5mA collector current and 10V Vce.
The NSVMUN5216T1G is an NPN pre-biased bipolar transistor.
The NSVMUN5216T1G is supplied in a SC-70-3 (SOT323) package for surface mounting.