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NSVMUN5214DW1T3G The NSVMUN5214DW1T3G is a Dual NPN Bias Resistor Transistor from ON Semiconductor. It features a 50V collector-emitter voltage and 100mA continuous current.
Mfr Part #:

NSVMUN5214DW1T3G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NSVMUN5214DW1T3G is a Dual NPN Bias Resistor Transistor from ON Semiconductor. It features a 50V collector-emitter voltage and 100mA continuous current.
✓ Total Stock: 19,616 pcs
$ Price Range: $0.99

NSVMUN5214DW1T3G Available from 2 distributors

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✓ Non-Authorised
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Smaxon Electronics ✓
Non-Authorised Inventory information
10,000 pcs
On Request
10000 pcs On Request 1 On Request On Request 19+ On Request On Request
Flip Electronics ✓
Non-Authorised Inventory information
9,616 pcs
On Request
9616 pcs On Request 1 On Request On Request On Request On Request On Request
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NSVMUN5214DW1T3G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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NSVMUN5214DW1T3G Description

Short technical summary and product information.

The NSVMUN5214DW1T3G is a dual NPN bipolar transistor with an integrated monolithic bias resistor network, designed by ON Semiconductor. This device simplifies circuit design by replacing a single transistor and its external resistors, reducing board space and component count.

 

Key electrical specifications include a collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 100mA. It offers a minimum DC current gain (hFE) of 80 at 5mA and 10V, with a Vce saturation of 250mV at 300µA and 10mA. The integrated resistors include a series base resistor (R1) of 10 kΩ and a base-emitter resistor (R2) of 47 kΩ.

 

This transistor is housed in a compact SOT-363 (SC-88/SC70-6) surface mount package. It is designed for applications requiring simplified circuitry and reduced component footprint. The device is Pb-Free and Halogen Free.

 

The maximum power dissipation is 250mW at 25°C ambient temperature for one junction heated. The device is suitable for various electronic applications where space and component count reduction are critical.

NSVMUN5214DW1T3G Quick Information

Product Type: Transistor
Canonical Name: Dual NPN Bias Resistor Transistor
Subcategory: Bipolar (BJT) - Arrays, Pre-Biased

NSVMUN5214DW1T3G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSVMUN5214DW1T3G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSVMUN5214DW1T3G Features

  • Dual NPN pre-biased transistor array.
  • Integrated 10kΩ and 47kΩ resistors.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Compact SOT-363 surface mount package.

NSVMUN5214DW1T3G Applications

  • Simplifies circuit design and reduces component count.
  • Ideal for space-constrained applications.
  • Suitable for digital logic interfaces.
  • Used in general electronic circuits.

NSVMUN5214DW1T3G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NSVMUN5214DW1T3G?

The maximum collector-emitter voltage is 50 Vdc.

What is the continuous collector current rating?

The continuous collector current is 100 mAdc.

What is the package type for this transistor array?

The package type is SOT-363, also known as SC-88/SC70-6.

What are the integrated resistor values?

It includes a 10 kΩ series base resistor and a 47 kΩ base-emitter resistor.

What is the minimum DC current gain (hFE)?

The minimum DC current gain (hFE) is 80 at 5mA, 10V.

Is this device RoHS compliant?

Yes, the device is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1.

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