Mfr Part #:

NSVMUN5135DW1T1G

The On Semiconductor NSVMUN5135DW1T1G is a Dual PNP Pre-Biased Transistor Array. It features a 50V Collector-Emitter Voltage and 100mA continuous current, housed in a SOT-363 package.

✓ Total Stock: 299,370 pcs

$ Price Range: $0.99

NSVMUN5135DW1T1G Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Flip Electronics ✓ Non-Authorised Inventory information	241,350 pcs On Request	241350 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	58,020 pcs On Request	58020 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

NSVMUN5135DW1T1G Description

Short technical summary and product information.

The NSVMUN5135DW1T1G from On Semiconductor is a Dual PNP Pre-Biased Transistor Array designed to simplify circuit design and reduce board space. This device integrates two PNP transistors with monolithic bias resistor networks, eliminating the need for external components.

Key electrical characteristics include a maximum Collector-Emitter Voltage (VCEO) of 50Vdc and a continuous Collector Current (IC) of 100mAdc. It also features a minimum DC Current Gain (hFE) of 80 at 5mA, 10V and a Vce Saturation of 250mV at 300µA, 10mA. The integrated bias resistor has a nominal value of 47kΩ.

This transistor array is supplied in a Surface Mountable SOT-363 package (also known as SC-88/SC70-6). The device is rated for a power dissipation of 250mW at 25°C ambient temperature. It is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant, making it suitable for various electronic applications requiring component count reduction and space saving.

The NSVMUN5135DW1T1G is designed to replace single transistors and their external bias networks, offering a cost-effective solution for circuit simplification. Its integrated nature helps reduce system cost and board space.

NSVMUN5135DW1T1G Quick Information

Product Type: Transistor Array, Pre-Biased

Canonical Name: Dual PNP Bias Resistor Transistor

Subcategory: Pre-Biased

NSVMUN5135DW1T1G Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Pb-Free

NSVMUN5135DW1T1G Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSVMUN5135DW1T1G Features

Dual PNP pre-biased transistor array.
50V Collector-Emitter Voltage rating.
100mA continuous collector current.
Integrated 47kΩ bias resistor.
SOT-363 surface mount package.

NSVMUN5135DW1T1G Applications

Simplifies digital logic circuits.
Reduces component count on PCBs.
Ideal for space-constrained designs.
Used in general purpose switching.

NSVMUN5135DW1T1G FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum Collector-Emitter Voltage for the NSVMUN5135DW1T1G?

The maximum Collector-Emitter Voltage (VCEO) for the NSVMUN5135DW1T1G is 50 Vdc.

What is the continuous collector current rating?

The continuous collector current (IC) rating for the NSVMUN5135DW1T1G is 100 mAdc.

What package type is the NSVMUN5135DW1T1G supplied in?

The NSVMUN5135DW1T1G is supplied in a SOT-363 package.

Is the NSVMUN5135DW1T1G RoHS compliant?

Yes, the NSVMUN5135DW1T1G is RoHS3 Compliant.

What is the minimum DC current gain (hFE) for this transistor array?

The minimum DC current gain (hFE) is 80 at 5mA, 10V.

What is the Vce Saturation voltage?

The Vce Saturation is a maximum of 250mV at 300µA, 10mA.

Does this device contain lead?

No, this device is Pb-Free.