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NSVMUN5131T1G The On Semiconductor NSVMUN5131T1G is a PNP Pre-Biased Transistor with a 50V collector-emitter voltage and 100mA continuous collector current. It is housed in a surface mount SC-70-3 (SOT323) package.
Mfr Part #:

NSVMUN5131T1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NSVMUN5131T1G is a PNP Pre-Biased Transistor with a 50V collector-emitter voltage and 100mA continuous collector current. It is housed in a surface mount SC-70-3 (SOT323) package.
✓ Total Stock: 37,020 pcs
$ Price Range: $0.99

NSVMUN5131T1G Available from 1 distributor

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✓ Non-Authorised
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Optech Co.,Limited ✓
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37,020 pcs
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37020 pcs On Request 1 On Request On Request On Request On Request On Request
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NSVMUN5131T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Lead Spacing
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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NSVMUN5131T1G Description

Short technical summary and product information.

The NSVMUN5131T1G from On Semiconductor is a PNP type digital transistor featuring a monolithic bias resistor network. This integrated design simplifies circuit design, reduces board space, and lowers component count compared to discrete components.

 

Key electrical specifications include a maximum collector-emitter voltage of 50Vdc and a continuous collector current of 100mAdc. The device incorporates internal resistors with a nominal value of 2.2 kΩ for both base (R1) and base-emitter (R2).

 

This transistor is designed for surface mount applications and comes in an SC-70-3 (SOT323) package. It offers a maximum power dissipation of 202 mW. The minimum DC current gain (hFE) is specified as 8 at 5mA collector current and 10V collector-emitter voltage. Saturation voltage (Vce Sat) is a maximum of 250mV at 5mA base current and 10mA collector current.

 

The NSVMUN5131T1G is suitable for applications where simplified circuit design and reduced component count are beneficial. Its pre-biased nature eliminates the need for external bias resistors, making it easier to integrate into various electronic circuits.

NSVMUN5131T1G Quick Information

Product Type: Transistor
Canonical Name: PNP Pre-Biased Transistor
Subcategory: Pre-Biased Transistor

NSVMUN5131T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free

NSVMUN5131T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSVMUN5131T1G Features

  • PNP Pre-Biased Transistor with integrated resistors.
  • 50V Collector-Emitter Voltage rating.
  • 100mA Continuous Collector Current.
  • Surface mount SC-70-3 (SOT323) package.
  • 2.2 kΩ internal bias resistors.

NSVMUN5131T1G Applications

  • Simplifies circuit design and reduces component count.
  • Ideal for digital logic interface circuits.
  • Suitable for space-constrained applications.
  • Replaces discrete transistor and bias resistor networks.

NSVMUN5131T1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NSVMUN5131T1G?

The maximum collector-emitter voltage is 50 Vdc.

What is the continuous collector current rating?

The continuous collector current is 100 mAdc.

What is the package type for this transistor?

This transistor is available in SC-70, SOT-323, and SC-70-3 (SOT323) packages.

What is the internal resistance value?

The internal resistors (R1 and R2) are both 2.2 kOhms.

What is the minimum DC current gain (hFE)?

The minimum DC current gain (hFE) is 8 at 5mA collector current and 10V collector-emitter voltage.

What is the maximum saturation voltage (Vce Sat)?

The maximum saturation voltage is 250mV at 5mA base current and 10mA collector current.

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