NSVMUN5113DW1T3G The NSVMUN5113DW1T3G is a dual PNP bias resistor transistor from On Semiconductor. It offers a 50V collector-emitter voltage and 100mA continuous collector current.
Mfr Part #:

NSVMUN5113DW1T3G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NSVMUN5113DW1T3G is a dual PNP bias resistor transistor from On Semiconductor. It offers a 50V collector-emitter voltage and 100mA continuous collector current.
✓ Total Stock: 110,000 pcs
$ Price Range: $0.99

NSVMUN5113DW1T3G Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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110,000 pcs
110000 pcs On Request 1 On Request On Request On Request On Request On Request

NSVMUN5113DW1T3G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

NSVMUN5113DW1T3G Description

Short technical summary and product information.

The On Semiconductor NSVMUN5113DW1T3G is a dual PNP bias resistor transistor designed to simplify circuit design by integrating a transistor with a monolithic bias resistor network. This device replaces individual components, reducing system cost and board space.

 

Key electrical specifications include a collector-emitter voltage of 50V and a continuous collector current of 100mA. It features a pre-biased configuration with a 47kΩ resistance. The transistor type is 2 PNP - Pre-Biased (Dual), with a minimum DC current gain (hFE) of 80 at 5mA, 1V.

 

This component is housed in a compact SC-88/SC70-6/SOT-363 package, suitable for surface mount applications. It has a power dissipation rating of 250mW. The device is RoHS3 compliant, REACH unaffected, and rated MSL 1.

 

Designed for applications requiring reduced component count and board space, this transistor array simplifies designs where integrated biasing is beneficial.

NSVMUN5113DW1T3G Quick Information

Product Type: Transistor Array
Canonical Name: Dual PNP Bias Resistor Transistor
Subcategory: Pre-Biased BJT

NSVMUN5113DW1T3G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NSVMUN5113DW1T3G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSVMUN5113DW1T3G Features

  • Dual PNP pre-biased transistor array.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Integrated 47kΩ bias resistors.
  • Surface mount SC-88/SC70-6/SOT-363 package.

NSVMUN5113DW1T3G Applications

  • Simplifies circuit designs.
  • Reduces component count.
  • Reduces board space.
  • Suitable for integrated biasing.

NSVMUN5113DW1T3G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage for the NSVMUN5113DW1T3G?

The collector-emitter voltage is 50V.

What is the continuous collector current rating?

The continuous collector current is 100mAdc.

What is the resistance value of the integrated resistors?

The integrated resistors have a value of 47kΩ.

What package type is the NSVMUN5113DW1T3G supplied in?

It is supplied in a 6-TSSOP, SC-88, SOT-363 package.

Is the NSVMUN5113DW1T3G RoHS compliant?

Yes, it is RoHS3 compliant.

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