| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
200,000 pcs
|
200000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
|
63,000 pcs
|
63000 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Halogen Free | |
| Mounting Type | |
| Power | |
| Power Dissipation | |
| Resistor | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The ON Semiconductor NSVMUN5111DW1T3G is a Dual PNP Bias Resistor Transistor (BRT). This integrated device contains two PNP transistors with monolithic bias resistor networks, simplifying circuit design, reducing board space, and decreasing component count. It is rated for a maximum collector-emitter voltage of 50Vdc and a continuous collector current of 100mAdc.
The transistor features integrated resistors with a nominal value of 10kΩ. The minimum DC current gain (hFE) is 35 at 5mA and 10V, with a Vce saturation of 250mV maximum at 300µA and 10mA. The device operates within a temperature range of -55°C to +150°C.
Packaged in an SC-88/SC70-6/SOT-363 surface-mount package, the NSVMUN5111DW1T3G is suitable for various electronic applications requiring simplified bias networks. It is Pb-Free and Halogen Free compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.04 | $0.04 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 50 Vdc.
The continuous collector current is 100 mAdc.
The integrated resistors have a nominal value of 10kΩ.
The minimum operating temperature is -55°C.
The maximum operating temperature is +150°C.
Yes, it is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.