| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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258,000 pcs
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258000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NSVMUN2132T1G is a PNP Pre-Biased Transistor manufactured by ON Semiconductor. This component is designed for surface mount applications and features a voltage rating of 50V and a current capacity of 100mA. It has a power dissipation of 230mW and a DC current gain (hFE) of at least 15 at 5mA and 10V. The saturation voltage (Vce) is a maximum of 250mV at 1mA and 10mA. It includes an internal resistor of 4.7 kΩ.
This transistor is suitable for various electronic circuits requiring a pre-biased PNP configuration. Its compact SC-59 package makes it ideal for space-constrained designs. The RoHS3 compliant status indicates adherence to environmental regulations, though this specific compliance status is unverified.
Key electrical characteristics include its 50V breakdown voltage and 100mA collector current capability. The pre-biased nature simplifies circuit design by integrating a base resistor. The Surface Mount package (TO-236-3, SC-59, SOT-23-3) is standard for automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage is 50V.
The maximum continuous collector current is 100mA.
The power dissipation is 230mW.
It is available in a Surface Mount package, specifically TO-236-3, SC-59, SOT-23-3.
The minimum DC current gain (hFE) is 15 at 5mA and 10V.
The Vce Saturation is 250mV maximum at 1mA and 10mA.