NSVMSD42WT1G The ON Semiconductor NSVMSD42WT1G is an NPN high voltage transistor designed for general purpose amplifier applications. It features a 300V breakdown voltage and a 150mA continuous collector current.
Mfr Part #:

NSVMSD42WT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NSVMSD42WT1G is an NPN high voltage transistor designed for general purpose amplifier applications. It features a 300V breakdown voltage and a 150mA continuous collector current.
Total Stock: 75,000 pcs
$ Price Range: $0.99

NSVMSD42WT1G Available from 1 distributor

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NSVMSD42WT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Breakdown Voltage (Minimum @ IC = 100 mA, IE = 0)
Breakdown Voltage (Minimum @ IC=1.0 mA, IB=0)
Breakdown Voltage (Minimum @ IE = 100 mA, IE = 0)
Collector - Emitter Saturation Voltage
Collector Current - Continuous
Collector-Base Cutoff Current
Current
DC Current Gain (Minimum @ VCE = -10 V, IC = -1.0 mA)
DC Current Gain (Minimum @ VCE=10 V; IC=30 mA)
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Cutoff Current
Halogen Free
Junction and Storage Temperature Range
Mounting Type
Operating Temperature
Power
Power Dissipation
Supplier Device Package
Tape & Reel
Thermal Resistance Junction-to-Ambient
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

NSVMSD42WT1G Description

Short technical summary and product information.

The ON Semiconductor NSVMSD42WT1G is an NPN silicon planar transistor suitable for general purpose amplifier applications. This device is housed in a compact SC-70/SOT-323 package, making it ideal for low power surface mount applications.

 

Key electrical specifications include a collector-emitter breakdown voltage of 300V and a continuous collector current rating of 150mA. The transistor offers a DC current gain (hFE) of 40 at 30mA and 10V, with a collector-emitter saturation voltage of 0.5V maximum at 2mA collector current and 2mA base current.

 

This component operates within a wide temperature range of -55°C to 150°C. It is designed for surface mount installation and comes in a tape and reel package for automated assembly processes.

 

The NSVMSD42WT1G is Pb-free and halogen-free, adhering to RoHS 3 compliance standards. Its small footprint and robust specifications make it a versatile choice for various electronic designs.

NSVMSD42WT1G Quick Information

Product Type: NPN Transistor
Canonical Name: NPN High Voltage Transistor
Subcategory: Single

NSVMSD42WT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NSVMSD42WT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSVMSD42WT1G Features

  • 300V collector-emitter breakdown voltage.
  • 150mA continuous collector current rating.
  • NPN silicon planar transistor.
  • SC-70 (SOT-323) surface mount package.
  • Pb-free and halogen-free construction.

NSVMSD42WT1G Applications

  • Suitable for high-voltage switching applications.
  • Used in general-purpose amplifier circuits.
  • Ideal for low power surface mount designs.
  • Applicable in automotive electronic systems.
  • Suitable for signal amplification in various devices.

NSVMSD42WT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the NSVMSD42WT1G?

The collector-emitter breakdown voltage is 300V.

What package does the NSVMSD42WT1G come in?

It comes in a SC-70 (SOT-323) surface-mount package.

What is the maximum collector current for this transistor?

The maximum collector current is 0.15A.

What is the operating temperature range of the NSVMSD42WT1G?

-55°C to 150°C.

Is the NSVMSD42WT1G RoHS compliant?

Yes, it is RoHS3 compliant.

Is the device lead-free?

Yes, it is Pb-Free.

Is the NSVMSD42WT1G halogen free?

Yes, it is Halogen Free.

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