| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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11,460 pcs
|
11460 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This NPN pre-biased transistor, part number NSVMMUN2237LT1G from ON Semiconductor, is designed for simplified circuit design and reduced board space. It integrates a single transistor with a monolithic bias network, including a series base resistor and a base-emitter resistor.
Key electrical specifications include a collector-emitter voltage (Vceo) of 50V and a continuous collector current (Ic) of 100mA. The device has a DC current gain (hFE) of 80 (min) at 5mA and 10V, and a Vce saturation of 250mV (max) at 5mA and 10mA. It also features a 22 kΩ bias resistor and a power rating of 246 mW.
The NSVMMUN2237LT1G is housed in a SOT-23-3 (TO-236) surface-mount package. It is designed to replace a single device and its external resistor bias network, offering a cost-effective solution.
Environmental compliance includes RoHS3 compliance, MSL 1 Unlimited, and REACH unaffected status. The device is suitable for applications requiring reduced component count and board space.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (Vceo) for the NSVMMUN2237LT1G is 50 Vdc.
The continuous collector current (Ic) for the NSVMMUN2237LT1G is 100 mAdc.
The NSVMMUN2237LT1G has an integrated bias resistor of 22 kΩ.
The NSVMMUN2237LT1G is available in a SOT-23-3 (TO-236) surface-mount package.
The NSVMMUN2237LT1G is RoHS3 Compliant.