MMUN2235LT1G
On Semiconductor
The MMUN2235LT1G is a pre-biased NPN transistor from On Semiconductor, designed for simplified circuit design. It features integrated resistors and is housed in a SOT-23 package.
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252,000 pcs
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252000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The On Semiconductor NSVMMUN2233LT3G is a digital transistor featuring a monolithic bias resistor network, designed to replace discrete components and reduce board space. This NPN pre-biased transistor operates with a maximum collector-emitter voltage of 50V and can handle a continuous collector current of 100mA.
Key electrical characteristics include a DC current gain (hFE) of 80 at 5mA/10V and a Vce saturation of 250mV at 1mA/10mA. It has a power dissipation rating of 246mW and includes a nominal base-emitter resistor of 47 kΩ. The transistor is suitable for surface mount applications and comes in a compact SOT-23-3 (TO-236) package.
This series simplifies circuit design by integrating resistors directly into the transistor package. The device is Pb-free and halogen-free, aligning with environmental compliance standards. Its design makes it a suitable component for various digital logic and switching applications where space and component count reduction are beneficial.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 50 Vdc.
The continuous collector current is 100 mA.
It is an NPN pre-biased transistor.
The transistor is available in a SOT-23-3 (TO-236) package.
Yes, it is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.