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NSVMMBTH10LT1G The On Semiconductor NSVMMBTH10LT1G is an NPN RF transistor designed for high-frequency applications. It offers a 25V collector-emitter voltage and operates up to 650MHz.
Mfr Part #:

NSVMMBTH10LT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NSVMMBTH10LT1G is an NPN RF transistor designed for high-frequency applications. It offers a 25V collector-emitter voltage and operates up to 650MHz.
✓ Total Stock: 243,000 pcs
$ Price Range: $0.30

NSVMMBTH10LT1G Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
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243,000 pcs
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243000 pcs On Request 1 On Request On Request On Request On Request On Request
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NSVMMBTH10LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Voltage
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NSVMMBTH10LT1G Description

Short technical summary and product information.

The On Semiconductor NSVMMBTH10LT1G is an NPN silicon RF transistor suitable for VHF/UHF applications. It features a maximum collector-emitter voltage of 25V and a maximum collector-base voltage of 30V. The device operates across a wide temperature range from -55°C to 150°C.

 

With a maximum frequency of 650MHz, this transistor is designed for RF signal amplification and switching. It offers a DC current gain (hFE) ranging from 60 to 240 at 4mA and 10V. The collector-emitter saturation voltage is a maximum of 0.5V, and the base-emitter on voltage is a maximum of 0.95V.

 

Packaged in a compact SOT-23-3 (TO-236-3) surface-mount case, the NSVMMBTH10LT1G is ideal for space-constrained designs. It is supplied on tape and reel with a standard package quantity of 3,000 units. The device is Pb-free, Halogen Free, and RoHS compliant, making it suitable for environmentally conscious manufacturing processes.

NSVMMBTH10LT1G Quick Information

Product Type: RF Transistor
Series: NSVMMBTH10LT1G
Canonical Name: NPN RF Transistor
Subcategory: RF Transistor

NSVMMBTH10LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSVMMBTH10LT1G Estimated Pricing

Qty Low High
1+ $0.30 $0.30

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSVMMBTH10LT1G Features

  • NPN silicon RF transistor.
  • 25V collector-emitter voltage rating.
  • 650MHz operating frequency.
  • SOT-23-3 surface-mount package.
  • Pb-free and RoHS compliant.

NSVMMBTH10LT1G Applications

  • Suitable for VHF/UHF applications.
  • Used in RF amplification circuits.
  • Ideal for RF switching applications.
  • Designed for high-frequency signal processing.

NSVMMBTH10LT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NSVMMBTH10LT1G?

The maximum collector-emitter voltage is 25 Vdc.

What is the operating frequency of the NSVMMBTH10LT1G transistor?

The operating frequency is 650MHz.

What is the package type for the NSVMMBTH10LT1G?

The package type is SOT-23-3.

What is the operating temperature range for this RF transistor?

The operating temperature range is -55°C to 150°C.

Is the NSVMMBTH10LT1G RoHS compliant?

Yes, the NSVMMBTH10LT1G is RoHS3 Compliant.

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