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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
13,020 pcs
|
13020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base-Emitter On Voltage | |
| Collector - Emitter Saturation Voltage | |
| Collector Current - Continuous | |
| Collector Cutoff Current (Maximum @ VCB = -80 Vdc, IE = 0) | |
| Collector Cutoff Current (Maximum @ VCE = 60 Vdc, IB = 0) | |
| Collector-Base Voltage | |
| Collector-Emitter Breakdown Voltage | |
| Collector-Emitter Voltage | |
| Current | |
| Current-Gain - Bandwidth Product | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain Hfe (Minimum @ 100 mA, 1 V) | |
| DC Current Gain Hfe (Minimum @ IC = -10 mAdc, VCE = -1.0 Vdc) | |
| DC Current Gain Hfe (Minimum @ IC = -100 mAdc, VCE = -1.0 Vdc) | |
| Emitter-Base Breakdown Voltage | |
| Emitter-Base Voltage | |
| Frequency | |
| Halogen Free | |
| Junction and Storage Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Thermal Resistance Junction To Ambient (Maximum @ Alumina Substrate) | |
| Thermal Resistance Junction To Ambient (Maximum @ FR -5 Board) | |
| Total Device Dissipation (Maximum @ TA=25 °C, Alumina Substrate) | |
| Total Device Dissipation (Maximum @ TA=25 °C, FR -5 Board) | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NSVMMBTA05LT1G is an NPN silicon transistor manufactured by ON Semiconductor. It is designed for various electronic applications requiring a reliable switching or amplification component.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 60V and a continuous collector current (IC) of 500mA. The transistor exhibits a DC current gain (hFE) of 100 at 100mA and 1V, and a current-gain bandwidth product (fT) of 100MHz at 10mA and 2.0V.
This device features a low collector-emitter saturation voltage (VCE(sat)) of 250mV at 10mA/100mA and a base-emitter on-voltage (VBE(on)) of 1.2V at 100mA/1.0V. The operating temperature range is -55°C to 150°C (TJ).
The NSVMMBTA05LT1G is supplied in a compact SOT-23-3 (TO-236) surface mount package, suitable for automated assembly processes. It is rated for a power dissipation of 225mW on an FR-5 board.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.32 | $0.32 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the NSVMMBTA05LT1G is 80 Vdc.
The continuous collector current (IC) for this transistor is 500 mAdc.
The operating temperature range is -55°C to +150°C.
The NSVMMBTA05LT1G is available in a SOT-23-3 (TO-236) package.
Yes, the NSVMMBTA05LT1G is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.