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NSVMMBT6429LT1G The NSVMMBT6429LT1G is an NPN silicon amplifier transistor from ON Semiconductor. It offers a 45V collector-emitter voltage and 200mA continuous collector current.
Mfr Part #:

NSVMMBT6429LT1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NSVMMBT6429LT1G is an NPN silicon amplifier transistor from ON Semiconductor. It offers a 45V collector-emitter voltage and 200mA continuous collector current.
✓ Total Stock: 11,775 pcs
$ Price Range: $0.99

NSVMMBT6429LT1G Available from 2 distributors

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✓ Non-Authorised
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Smaxon Electronics ✓
Non-Authorised Inventory information
9,340 pcs
On Request
9340 pcs On Request 1 On Request On Request 1549+ On Request On Request
Flip Electronics ✓
Non-Authorised Inventory information
2,435 pcs
On Request
2435 pcs On Request 1 On Request On Request On Request On Request On Request
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NSVMMBT6429LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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NSVMMBT6429LT1G Description

Short technical summary and product information.

The NSVMMBT6429LT1G is an NPN silicon amplifier transistor manufactured by ON Semiconductor. It is designed for applications requiring a 45V collector-emitter voltage (VCEO) and can handle a continuous collector current (IC) of up to 200mA. This transistor operates at a frequency of 700MHz.

 

This device comes in a compact SOT-23-3 (TO-236) surface mount package, making it suitable for space-constrained designs. It features a high DC current gain (hFE) of 500 at 100µA collector current and 5V collector-emitter voltage. The maximum Vce saturation is 600mV at 5mA base current and 100mA collector current.

 

The operating temperature range for the NSVMMBT6429LT1G is -55°C to 150°C (TJ). It is also specified with a total device dissipation of 300mW when mounted on an alumina substrate at 25°C, and 225mW on an FR-5 board at 25°C. The device is Pb-Free and Halogen Free.

 

Key electrical characteristics include a breakdown voltage of 45V (VCEO) and a collector cutoff current (ICES) of 0.1µA at 30V. The NSVMMBT6429LT1G is suitable for various amplification and switching applications in electronic circuits.

NSVMMBT6429LT1G Quick Information

Product Type: NPN Silicon Amplifier Transistor
Canonical Name: NPN Silicon Amplifier Transistor NSVMMBT6429LT1G
Subcategory: Bipolar (BJT) - Single

NSVMMBT6429LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSVMMBT6429LT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSVMMBT6429LT1G Features

  • NPN silicon amplifier transistor.
  • 45V collector-emitter voltage rating.
  • 200mA continuous collector current.
  • 700MHz operating frequency.
  • SOT-23-3 surface mount package.

NSVMMBT6429LT1G Applications

  • Used in low-power switching circuits
  • Suitable for portable device applications
  • Ideal for space-constrained designs
  • Applicable in amplification stages

NSVMMBT6429LT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating for the NSVMMBT6429LT1G?

The collector-emitter voltage (VCEO) rating for the NSVMMBT6429LT1G is 45 Vdc.

What is the continuous collector current for this transistor?

The continuous collector current (IC) for the NSVMMBT6429LT1G is 200 mAdc.

What is the operating temperature range of the NSVMMBT6429LT1G?

The operating temperature range for the NSVMMBT6429LT1G is -55°C to 150°C (TJ).

What package type is the NSVMMBT6429LT1G supplied in?

The NSVMMBT6429LT1G is supplied in a SOT-23-3 (TO-236) package.

What is the DC current gain (hFE) of the NSVMMBT6429LT1G?

The DC current gain (hFE) is 500 at 100µA collector current and 5V collector-emitter voltage.

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