NSVMMBT589LT1G The ON Semiconductor NSVMMBT589LT1G is a PNP silicon switching transistor designed for load management in portable applications. It offers a 30V collector-emitter voltage and 1A continuous collector current.
Mfr Part #:

NSVMMBT589LT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NSVMMBT589LT1G is a PNP silicon switching transistor designed for load management in portable applications. It offers a 30V collector-emitter voltage and 1A continuous collector current.
Total Stock: 30,000 pcs
$ Price Range: $0.99

NSVMMBT589LT1G Available from 1 distributor

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NSVMMBT589LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Current Gain (Minimum @ IC = -1.0 A, VCE = -2.0 V)
Current Gain (Minimum @ IC = -1.0 mA, VCE = -2.0 V)
Current Gain (Minimum @ IC = -2.0 A, VCE = -2.0 V)
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Junction and Storage Temperature
Lead Style
Leakage Current (Maximum @ VCB = 30 Vdc, IE = 0)
Leakage Current (Maximum @ VCES = -30 Vdc)
Leakage Current (Maximum @ VEB = 4.0 Vdc)
Mounting Type
Operating Temperature
Pb-Free
Power
Power Dissipation (Maximum @ TA = 25 °C, Alumina Substrate)
Power Dissipation (Maximum @ TA = 25 °C, FR -5 Board)
Supplier Device Package
Tape & Reel
Thermal Resistance (Maximum @ TA = 25 °C, Alumina Substrate)
Thermal Resistance (Maximum @ TA = 25 °C, FR -5 Board)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
current (Maximum @ ICM)

NSVMMBT589LT1G Description

Short technical summary and product information.

The ON Semiconductor NSVMMBT589LT1G is a high-current PNP silicon switching transistor suitable for load management in portable applications. It features a maximum collector-emitter voltage of 30V and a continuous collector current of 1A, with a peak current capability of 2A.

 

This transistor operates within a junction and storage temperature range of -55°C to +150°C. It is housed in a compact SOT-23-3 (TO-236) surface-mount package, making it ideal for space-constrained designs. The device offers a DC current gain (hFE) of up to 100 at 500mA and 2V, and a frequency response up to 100MHz.

 

Key electrical characteristics include a Vce(sat) of 650mV at 200mA and 2A. The device is Pb-Free and Halogen Free, complying with RoHS standards. Thermal performance includes a total device dissipation of 310mW on an FR-5 board and a junction-to-ambient thermal resistance of 403°C/W.

NSVMMBT589LT1G Quick Information

Product Type: PNP Transistor
Canonical Name: NSVMMBT589LT1G PNP Silicon Switching Transistor
Subcategory: Single PNP

NSVMMBT589LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSVMMBT589LT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSVMMBT589LT1G Features

  • PNP silicon switching transistor.
  • 30V collector-emitter voltage rating.
  • 1A continuous collector current.
  • 100MHz frequency response.
  • SOT-23-3 surface mount package.

NSVMMBT589LT1G Applications

  • Ideal for load management.
  • Suitable for portable applications.
  • Used in switching circuits.
  • Compact design integration.

NSVMMBT589LT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage for the NSVMMBT589LT1G?

The collector-emitter voltage is 30 Vdc.

What is the continuous collector current rating?

The continuous collector current is 1 Adc.

What is the operating temperature range?

The operating temperature range is -55°C to +150°C.

What is the package type for this transistor?

The package type is SOT-23-3.

Is the NSVMMBT589LT1G RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1.

Is this transistor Pb-Free and Halogen Free?

Yes, the device is Pb-Free and Halogen Free/BFR Free.

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