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NSVMMBT5550LT1G The On Semiconductor NSVMMBT5550LT1G is an NPN silicon transistor designed for high voltage applications. It offers a 140V collector-emitter voltage and 600mA continuous collector current.
Mfr Part #:

NSVMMBT5550LT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NSVMMBT5550LT1G is an NPN silicon transistor designed for high voltage applications. It offers a 140V collector-emitter voltage and 600mA continuous collector current.
✓ Total Stock: 27,520 pcs
$ Price Range: $0.99

NSVMMBT5550LT1G Available from 1 distributor

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✓ Non-Authorised
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Flip Electronics ✓
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27,520 pcs
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NSVMMBT5550LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Operating Temperature
Power
Supplier Device Package
Supplier Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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NSVMMBT5550LT1G Description

Short technical summary and product information.

The NSVMMBT5550LT1G from On Semiconductor is a high voltage NPN silicon transistor. It is designed for applications requiring robust performance with a maximum collector-emitter voltage of 140V and a continuous collector current of 600mA.

 

This transistor features a high collector-base voltage rating of 180V and an emitter-base voltage of 6.0V. It is specified with a DC current gain (hFE) of at least 60 at 10mA and 5V, and a Vce saturation of 250mV maximum at 5mA collector current and 50mA base current.

 

Packaged in a compact SOT-23-3 (TO-236) surface mount package, the NSVMMBT5550LT1G is suitable for space-constrained designs. It operates within a wide temperature range of -55°C to 150°C (TJ). The device is Pb-Free and Halogen Free, complying with RoHS standards.

 

With a total power dissipation of 225mW on an FR-5 board, this transistor is well-suited for various general-purpose amplification and switching applications where high voltage handling is necessary.

NSVMMBT5550LT1G Quick Information

Product Type: Transistor
Series: NSVMMBT5550LT1G
Canonical Name: NPN Silicon High Voltage Transistor
Subcategory: Single

NSVMMBT5550LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSVMMBT5550LT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSVMMBT5550LT1G Features

  • High voltage NPN silicon transistor.
  • 140V collector-emitter voltage rating.
  • 600mA continuous collector current.
  • Compact SOT-23-3 surface mount package.
  • Pb-Free and Halogen Free.

NSVMMBT5550LT1G Applications

  • Suitable for high-voltage switching applications.
  • Used in low-current signal amplification circuits.
  • Ideal for automotive and industrial power control.
  • Applicable in electronic switching and relay driver circuits.

NSVMMBT5550LT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NSVMMBT5550LT1G?

The NSVMMBT5550LT1G has a maximum collector-emitter voltage of 140 Vdc.

What is the continuous collector current rating?

The continuous collector current rating for this transistor is 600 mAdc.

What is the operating temperature range?

The operating and storage temperature range is -55°C to 150°C (TJ).

What package type is the NSVMMBT5550LT1G supplied in?

The NSVMMBT5550LT1G is supplied in a SOT-23-3 (TO-236) package.

Is the NSVMMBT5550LT1G RoHS compliant?

Yes, the NSVMMBT5550LT1G is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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