| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
200,000 pcs
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200000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NSVMMBT5401WT1G is a PNP silicon transistor manufactured by ON Semiconductor. This device is designed for high voltage applications, featuring a maximum collector-emitter voltage rating of 150V and a continuous collector current of up to 500mA. It operates within a junction and storage temperature range of -55°C to 150°C.
With a power dissipation of 400 mW at 25°C and a thermal resistance of 312°C/W, the NSVMMBT5401WT1G is suitable for various electronic circuits. Its gain-bandwidth product reaches up to 300MHz, indicating good high-frequency performance. The transistor is supplied in a compact SC-70 (SOT-323) surface mount package, making it ideal for space-constrained designs.
This component is Pb-Free and Halogen Free, complying with RoHS standards. It is also qualified under AEC-Q101, suitable for automotive and other applications requiring unique site and control change requirements. The NSVMMBT5401WT1G is available in tape and reel packaging for automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 150V.
The continuous collector current rating is 500mA.
The operating temperature range is -55°C to 150°C.
It is supplied in an SC-70, SOT-323 package.
Yes, the NSVMMBT5401WT1G is RoHS3 Compliant.
The gain-bandwidth product is up to 300MHz.