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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
264,000 pcs
|
264000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Emitter Saturation Voltage (Maximum @ IC = -10 mA, IB = -1.0 mA) | |
| Base Emitter Saturation Voltage (Maximum @ IC = -50 mA, IB = -5.0 mA) | |
| Collector Current | |
| Collector Emitter Saturation Voltage (Maximum @ IC = -50 mA, IB = -5.0 mA) | |
| Collector Emitter Saturation Voltage (Maximum @ IC = 10 mA, IB = 1.0 mA) | |
| Collector Emitter Voltage (Maximum) | |
| Collector-Base Breakdown Voltage | |
| Collector-Base Cutoff Current | |
| Collector-Base Voltage | |
| Collector-Emitter Breakdown Voltage | |
| Current | |
| Current Gain Bandwidth Product (Typical/Maximum @ IC = -10 mA, VCE = -5.0 V, f = 100 MHz) | |
| DC Current Gain (Minimum/Typical @ IC = -1.0 mA, VCE = -5.0 V) | |
| DC Current Gain (Minimum/Typical @ IC = -10 mA, VCE = -5.0 V) | |
| DC Current Gain (Minimum/Typical/Maximum @ IC = -50 mA, VCE = -5.0 V) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cutoff Current | |
| Emitter-Base Breakdown Voltage | |
| Emitter-Base Voltage | |
| Frequency | |
| Halogen Free | |
| Input Capacitance (Cibo) | |
| Junction and Storage Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Pb-Free | |
| Power | |
| Supplier Device Package | |
| Thermal Resistance | |
| Total Device Dissipation | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The On Semiconductor NSVMMBT5401M3T5G is a PNP silicon transistor designed for general purpose amplifier applications. It features a high collector-emitter voltage of 150V and a continuous collector current of 60mA.
This device is housed in a SOT-723 surface mount package, making it ideal for low-power applications where board space is limited. The transistor offers a DC current gain (hFE) ranging from 50 to 240 depending on the operating conditions.
Key electrical characteristics include a current-gain bandwidth product (fT) of up to 300 MHz and a low collector-emitter saturation voltage (Vce Sat) of 600mV at 5mA collector current and 5mA base current. The operating temperature range is -55°C to 150°C.
This transistor is Pb-Free and Halogen Free, complying with RoHS standards. Its small footprint and robust specifications make it suitable for various electronic designs requiring a reliable PNP transistor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the NSVMMBT5401M3T5G is -150 Vdc.
The NSVMMBT5401M3T5G transistor is supplied in a SOT-723 package.
The operating temperature range for the NSVMMBT5401M3T5G is -55°C to 150°C.
Yes, the NSVMMBT5401M3T5G is RoHS3 Compliant.
The continuous collector current (IC) for the NSVMMBT5401M3T5G is -60 mAdc.
The typical current-gain bandwidth product (fT) for the NSVMMBT5401M3T5G is 180 MHz.