NSVMMBT5401LT3G The On Semiconductor NSVMMBT5401LT3G is a PNP bipolar junction transistor designed for high voltage applications. It offers a 150V collector-emitter voltage and 500mA continuous current in a compact SOT-23-3 package.
Mfr Part #:

NSVMMBT5401LT3G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NSVMMBT5401LT3G is a PNP bipolar junction transistor designed for high voltage applications. It offers a 150V collector-emitter voltage and 500mA continuous current in a compact SOT-23-3 package.
✓ Total Stock: 101,020 pcs
$ Price Range: $0.99

NSVMMBT5401LT3G Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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101,020 pcs
101020 pcs On Request 1 On Request On Request On Request On Request On Request

NSVMMBT5401LT3G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
Power Dissipation
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

NSVMMBT5401LT3G Description

Short technical summary and product information.

The NSVMMBT5401LT3G from ON Semiconductor is a high voltage PNP silicon transistor. It is designed for applications requiring robust performance with a maximum collector-emitter voltage of 150V and a continuous collector current of up to 500mA.

 

This transistor features a typical DC current gain (hFE) of 60 at 10mA and 5V, with a Vce saturation of 500mV at 5mA and 50mA. The operating temperature range is -55°C to 150°C, making it suitable for various environmental conditions.

 

Packaged in a SOT-23-3 (TO-236) surface-mount case, the NSVMMBT5401LT3G is ideal for space-constrained designs. It is supplied on tape and reel with a standard package quantity of 10,000 units. The device is Pb-free and Halogen-free, aligning with environmental compliance standards.

NSVMMBT5401LT3G Quick Information

Product Type: Bipolar Transistor
Canonical Name: PNP High Voltage Transistor
Subcategory: Single

NSVMMBT5401LT3G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSVMMBT5401LT3G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSVMMBT5401LT3G Features

  • High voltage PNP silicon transistor.
  • 150V collector-emitter voltage rating.
  • 500mA continuous collector current.
  • Compact SOT-23-3 surface mount package.
  • Pb-free and Halogen-free compliance.

NSVMMBT5401LT3G Applications

  • General purpose amplification circuits.
  • Low power switching applications.
  • High voltage signal processing.
  • Compact electronic designs.

NSVMMBT5401LT3G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NSVMMBT5401LT3G?

The maximum collector-emitter voltage is 150 Vdc.

What is the continuous collector current rating?

The continuous collector current is 500 mAdc.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package type is the NSVMMBT5401LT3G supplied in?

It is supplied in a SOT-23-3 (TO-236) package.

Is the NSVMMBT5401LT3G RoHS compliant?

Yes, the NSVMMBT5401LT3G is RoHS3 compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1.

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