| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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170,500 pcs
|
170500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
13,020 pcs
|
13020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Halogen Free | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NSVMMBT5087LT1G from On Semiconductor is a PNP silicon transistor designed for low noise applications. It offers a continuous collector current of 50 mA and a collector-emitter voltage of up to -50 Vdc.
This transistor features a gain-bandwidth product of 40 MHz and a DC current gain (hFE) of at least 250. The device is housed in a compact SOT-23-3 (TO-236) surface mount package, making it suitable for space-constrained designs.
Key electrical characteristics include a collector-emitter saturation voltage of 300mV maximum at 1mA/10mA and a base-emitter saturation voltage of 0.85V maximum at 1mA/10mA. The operating temperature range is from -55°C to 150°C.
The NSVMMBT5087LT1G is Pb-Free and Halogen Free, complying with RoHS standards. Its small size and low noise characteristics make it suitable for various amplification and switching applications in electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage rating is -50 Vdc.
The continuous collector current is -50 mAdc.
The operating temperature range is -55°C to 150°C.
The NSVMMBT5087LT1G is available in a SOT-23-3 (TO-236) surface mount package.
The gain-bandwidth product is 40 MHz.
The minimum DC current gain (hFE) is 250.