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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
171,000 pcs
|
171000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
16,020 pcs
|
16020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Breakdown Voltage (Minimum @ IC = 1.0 mAdc, IB = 0) | |
| Breakdown Voltage (Minimum @ IC = 10 /C 0109 Adc, IE = 0) | |
| Breakdown Voltage (Minimum @ IE = 10 /C 0109 Adc, IC = 0) | |
| Collector Current - Continuous | |
| Collector-Emitter Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Halogen Free | |
| Junction and Storage Temperature Range | |
| Lead Style | |
| Leakage Current (Maximum @ VCE = 30 Vdc, VEB = 3.0 Vdc) | |
| Mounting Type | |
| Operating Temperature | |
| Pb-Free | |
| Power | |
| Power Dissipation (Maximum @ FR -4 board, TA = 25 °C) | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance (Typical @ FR -4 Board (Note 1) | |
| Thermal Resistance (Typical @ FR -4 Board (Note 2) | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| gain (Minimum @ IC = -50 mAdc, VCE = -1.0 Vdc) | |
| gain (Minimum @ IC = 0.1 mAdc, VCE = 1.0 Vdc) | |
| gain (Minimum @ IC = 1.0 mAdc, VCE = 1.0 Vdc) | |
| gain (Minimum @ IC = 10 mAdc, VCE = 1.0 Vdc) | |
| gain (Minimum @ IC = 100 mAdc, VCE = 1.0 Vdc) |
The NSVMMBT3906TT1G from On Semiconductor is a PNP silicon transistor designed for general-purpose amplifier applications. It is housed in a compact SOT-416/SC-75 surface-mount package, making it suitable for low-power applications.
This transistor offers a maximum collector-emitter voltage of -40V and a continuous collector current of -200mA. It has a DC current gain (hFE) of up to 300 and a frequency rating of 250MHz. The device operates over a wide temperature range from -65°C to +150°C.
Key electrical characteristics include a collector-emitter saturation voltage of 400mV at 5mA/50mA and breakdown voltages of -40V for collector-emitter and collector-base, and -5.0V for emitter-base.
The NSVMMBT3906TT1G is Pb-Free, Halogen Free, and RoHS Compliant, suitable for various electronic designs requiring reliable PNP amplification.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-40 Vdc
-200 mAdc
-65°C ~ 150°C
SC-75, SOT-416
RoHS3 Compliant
1 Unlimited