NSVMMBT2907AWT1G The NSVMMBT2907AWT1G is a PNP bipolar junction transistor from ON Semiconductor. It is designed for general purpose amplifier applications.
Mfr Part #:

NSVMMBT2907AWT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NSVMMBT2907AWT1G is a PNP bipolar junction transistor from ON Semiconductor. It is designed for general purpose amplifier applications.
Total Stock: 890 pcs
$ Price Range: $0.99

NSVMMBT2907AWT1G Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
890 pcs
890 pcs On Request 1 On Request On Request On Request On Request On Request

NSVMMBT2907AWT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector-Emitter Saturation Voltage (Vce Sat)
Current
DC Current Gain (hFE)
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Junction and Storage Temperature
Mounting Type
Operating Temperature
Pb-Free
Power
Supplier Device Package
Tape & Reel
Thermal Resistance Junction-to-Ambient
Total Device Dissipation
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
voltage (Minimum)

NSVMMBT2907AWT1G Description

Short technical summary and product information.

The NSVMMBT2907AWT1G is a PNP silicon transistor manufactured by ON Semiconductor. It is designed for general purpose amplifier applications and is housed in a compact SC-70/SOT-323 surface mount package, suitable for low power applications.

 

Key electrical characteristics include a collector-emitter voltage of -60V, a continuous collector current of -600mA, and a DC current gain (hFE) of 100 at 150mA and 10V. The device operates over a wide temperature range from -55°C to 150°C.

 

This transistor is Pb-free, halogen-free, BFR-free, and RoHS compliant. It is available in tape and reel packaging for automated assembly processes.

NSVMMBT2907AWT1G Quick Information

Product Type: PNP Transistor
Canonical Name: NSVMMBT2907AWT1G PNP General Purpose Transistor
Subcategory: Bipolar (BJT) - Single

NSVMMBT2907AWT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSVMMBT2907AWT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSVMMBT2907AWT1G Features

  • PNP silicon general purpose transistor
  • 60V collector-emitter voltage rating
  • 600mA continuous collector current
  • Surface mount SC-70/SOT-323 package
  • Wide operating temperature range

NSVMMBT2907AWT1G Applications

  • Used in switching circuits
  • Suitable for amplification applications
  • Ideal for compact electronic designs
  • Applicable in signal processing

NSVMMBT2907AWT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NSVMMBT2907AWT1G?

The collector-emitter voltage is -60 Vdc.

What is the continuous collector current rating?

The continuous collector current is -600 mAdc.

What is the operating temperature range for this transistor?

The operating temperature range is -55°C to 150°C.

What package type is the NSVMMBT2907AWT1G supplied in?

It is supplied in the SC-70, SOT-323 package.

Is the NSVMMBT2907AWT1G RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the NSVMMBT2907AWT1G?

The Moisture Sensitivity Level is 1 Unlimited.

Home
Account

Categories