NSVMMBT2907AM3T5G The NSVMMBT2907AM3T5G is a PNP bipolar junction transistor from On Semiconductor. It is designed for general purpose amplifier applications.
Mfr Part #:

NSVMMBT2907AM3T5G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NSVMMBT2907AM3T5G is a PNP bipolar junction transistor from On Semiconductor. It is designed for general purpose amplifier applications.
Total Stock: 7,990 pcs
$ Price Range: $0.99

NSVMMBT2907AM3T5G Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
7,990 pcs
7990 pcs On Request 1 On Request On Request On Request On Request On Request

NSVMMBT2907AM3T5G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Leakage Current (Maximum @ VCB = -50 Vdc, IE = 0)
Leakage Current (Maximum @ VCB = -50 Vdc, IE = 0, TA = 125 °C)
Leakage Current (Maximum @ VCE = -30 Vdc, VEB(off) = -0.5 Vdc)
Mounting Type
Operating Temperature
Power
Power Dissipation (Maximum @ Alumina Substrate, TA = 25 °C)
Power Dissipation (Maximum @ FR -5 Board, TA = 25 °C)
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
gain (Minimum @ IC = 0.1 mAdc, VCE = 10 Vdc)
gain (Minimum @ IC = 1.0 mAdc, VCE = 10 Vdc)
gain (Minimum @ IC = 10 mAdc, VCE = 10 Vdc)
gain (Minimum @ IC = 150 mAdc, VCE = 10 Vdc)
voltage (Maximum @ VCBO)
voltage (Maximum @ VEBO)

NSVMMBT2907AM3T5G Description

Short technical summary and product information.

The NSVMMBT2907AM3T5G is a PNP general purpose transistor manufactured by On Semiconductor. It is housed in a compact SOT-723 surface mount package, making it ideal for low-power applications where board space is limited.

 

This transistor features a maximum collector-emitter voltage of -60 Vdc and a continuous collector current of -600 mAdc. It offers a DC current gain (hFE) of 100 at 150mA and 10V. The operating temperature range is from -55°C to 150°C.

 

The device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant. It is suitable for general purpose amplifier applications and other low-power surface mount designs.

 

Key electrical characteristics include a collector-emitter breakdown voltage of -60 Vdc and a frequency response up to 200MHz. The transistor type is PNP, and it is available in a SOT-723 package.

NSVMMBT2907AM3T5G Quick Information

Product Type: Transistor
Canonical Name: NSVMMBT2907AM3T5G PNP General Purpose Transistor
Subcategory: Single

NSVMMBT2907AM3T5G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NSVMMBT2907AM3T5G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSVMMBT2907AM3T5G Features

  • PNP general purpose transistor.
  • 60V collector-emitter voltage rating.
  • 600mA continuous collector current.
  • SOT-723 surface mount package.
  • RoHS3 Compliant and Halogen Free.

NSVMMBT2907AM3T5G Applications

  • Used in switching circuits
  • Suitable for amplification applications
  • Ideal for space-constrained designs
  • Compatible with automated assembly

NSVMMBT2907AM3T5G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the operating temperature range for the NSVMMBT2907AM3T5G?

-55°C to 150°C

What is the package type for the NSVMMBT2907AM3T5G transistor?

SOT-723

Is the NSVMMBT2907AM3T5G RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the continuous collector current for this PNP transistor?

600 mA

What is the maximum collector-emitter voltage?

-60 Vdc

Home
Account

Categories