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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
39,000 pcs
|
39000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Breakdown Voltage (Minimum @ IC = 10 /C 0109 Adc, IE = 0) | |
| Breakdown Voltage (Minimum @ IC = 10 mAdc, IB = 0) | |
| Breakdown Voltage (Minimum @ IE = 10 /C 0109 Adc, IC = 0) | |
| Current | |
| Current Gain Bandwidth Product (fT) | |
| DC Current Gain (Minimum @ At 100 mA At 10 Vdc) | |
| DC Current Gain (Minimum @ IC = 0.1 mAdc, VCE = 10 Vdc) | |
| DC Current Gain (Minimum @ IC = 1.0 mAdc, VCE = 10 Vdc) | |
| DC Current Gain (Minimum @ IC = 10 mAdc, VCE = 10 Vdc) | |
| DC Current Gain (Minimum @ IC = 150 mAdc, VCE = 10 Vdc) | |
| DC Current Gain (Minimum @ IC = 500 mAdc, VCE = 10 Vdc) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Factory Pack Quantity | |
| Frequency | |
| Halogen Free | |
| Leakage Current (Maximum @ VCE = 60 Vdc, VEB = 3.0 Vdc) | |
| Mounting Style | |
| Mounting Type | |
| Operating Temperature | |
| Operating Temperature (Minimum/Maximum) | |
| Power | |
| Power Dissipation (Maximum) | |
| Power Dissipation (Maximum) @ TA=25°C | |
| Supplier Device Package | |
| Technology | |
| Transistor Polarity | |
| Transistor Type | |
| Vbe Saturation (Maximum @ IC = -150 mAdc, IB = -15 mAdc) | |
| Vbe Saturation (Maximum @ IC = -500 mAdc, IB = -50 mAdc) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Vce Saturation (Maximum @ IC = -150 mAdc, IB = -15 mAdc) | |
| Vce Saturation (Maximum @ IC = -500 mAdc, IB = -50 mAdc) | |
| Vce Saturation (Maximum) | |
| Voltage |
The ON Semiconductor NSVMMBT2222ATT1G is a general-purpose NPN silicon transistor designed for amplifier applications. It is housed in a compact SOT-416/SC-75 surface-mount package, making it suitable for low-power applications.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 40V and a continuous collector current (IC) of 600mA. The transistor offers a minimum DC current gain (hFE) of 100 at 150mA and 10V, with a gain-bandwidth product (fT) of 300MHz. Saturation voltages are specified at 1V (VCE(sat)) and 1.2V (VBE(sat)) under specific test conditions.
This device operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 150mW. It is Pb-Free and Halogen Free, complying with RoHS standards. The SOT-416 package is designed for surface mounting.
Applications include general-purpose amplification and switching circuits where a small, reliable NPN transistor is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 40 Vdc.
The continuous collector current is 600 mAdc.
The operating temperature range is -55°C to +150°C.
The package type is SOT-416 / SC-75.
Yes, this device is RoHS3 Compliant.
The minimum DC current gain is 100 at 150mA collector current and 10V collector-emitter voltage.
The gain-bandwidth product is 300MHz.