| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
59,950 pcs
|
59950 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Capacitance | |
| Capacitance @ Vr, F | |
| Diode Type | |
| Forward Voltage | |
| Halogen Free | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Termination Style | |
| Voltage |
The NSVMMBD354LT1G is a dual hot carrier mixer diode from On Semiconductor, designed for UHF mixer, detector, and ultra-fast switching circuits. It features a Schottky barrier with low forward voltage (0.6V max at 10mA) and very low capacitance (1pF max at zero bias).
Electrical ratings include a maximum continuous reverse voltage of 7V and a total device dissipation of 300mW on an alumina substrate (225mW on FR-5 board). The diode operates over a junction temperature range of -55°C to +150°C. Reverse leakage current is 0.25µA max at 3V and 10µA max at 7V.
The device is housed in a SOT-23-3 (TO-236) surface mount package with gull wing leads. The NSV prefix indicates automotive qualification (AEC-Q101) and PPAP capability. The part is Pb-free, Halogen-free, and RoHS compliant per the datasheet.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.37 | $0.37 |
| 10+ | $0.23 | $0.23 |
| 100+ | $0.18 | $0.18 |
| 500+ | $0.17 | $0.17 |
| 1,000+ | $0.16 | $0.16 |
| 3,000+ | $0.16 | $0.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
7V.
0.6V maximum.
SOT-23-3 (TO-236).
1pF maximum at 0V bias, 1MHz.
Yes, per the datasheet.
10µA at 7V reverse voltage.
Surface mount.