| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
79,900 pcs
|
79900 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NSVMBT3904DW1T3G is a bipolar junction transistor (BJT) manufactured by On Semiconductor. It features a maximum collector-emitter voltage of 40V and a maximum collector current of 0.2A. The device has a high DC current gain (hFE) minimum of 100 at 10mA and 1V, making it suitable for switching and amplification in various electronic circuits. It is packaged in a SC-88/SC70-6/SOT-363 surface-mount package, which is commonly used for compact and automated assembly. The transistor operates within a temperature range of -55°C to +150°C, and it complies with RoHS standards. Its breakdown voltages are 40V for collector-emitter, 60V for collector-base, and 6V for emitter-base, ensuring reliable operation within specified limits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 40V.
It is packaged in a SC-88/SC70-6/SOT-363 surface-mount package.
-55°C to +150°C.
Yes, it is RoHS3 compliant.