NSVMBD54DWT1G Dual Schottky barrier diode array rated for 30V reverse voltage and 200mA forward current, in a surface-mount SOT-363 package.
Mfr Part #:

NSVMBD54DWT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
Dual Schottky barrier diode array rated for 30V reverse voltage and 200mA forward current, in a surface-mount SOT-363 package.
✓ Total Stock: 59,750 pcs
$ Price Range: $0.08 - $0.39

NSVMBD54DWT1G Available from 1 distributor

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✓ Non-Authorised
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59,750 pcs
59750 pcs On Request 1 On Request On Request On Request On Request On Request

NSVMBD54DWT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Diode Configuration
Halogen Free
Mounting Type
Operating Temperature
Reverse Recovery Time (trr)
Speed
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Voltage

NSVMBD54DWT1G Description

Short technical summary and product information.

The NSVMBD54DWT1G is a dual Schottky barrier diode array from onsemi, designed for high-speed switching, circuit protection, and voltage clamping applications. Each diode is rated for a maximum reverse voltage of 30V and an average rectified current of 200mA. The device features an extremely low forward voltage of 1V maximum at 100mA, with a typical forward voltage of only 0.35V at 10mA, minimizing conduction losses.

 

With a fast reverse recovery time of 5ns and a maximum reverse leakage current of 2µA at 25V, this diode array is well-suited for high-frequency switching circuits. The total capacitance is typically 7.6pF (10pF max) at 1V and 1MHz, making it suitable for RF and signal detection applications.

 

The part is housed in a compact 6-TSSOP/SC-88/SOT-363 surface-mount package, ideal for space-constrained portable and handheld devices. It is Pb-free, halogen-free/BFR-free, and RoHS3 compliant. Operating junction temperature range is up to 125°C, with a maximum power dissipation of 150mW.

NSVMBD54DWT1G Quick Information

Product Type: Schottky Diode Array
Series: MBD54DWT1G
Canonical Name: NSVMBD54DWT1G Dual Schottky Barrier Diode Array
Subcategory: Dual Diode

NSVMBD54DWT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

NSVMBD54DWT1G Estimated Pricing

Qty Low High
1+ $0.39 $0.39
10+ $0.26 $0.26
100+ $0.17 $0.17
500+ $0.11 $0.11
1,000+ $0.09 $0.09
3,000+ $0.08 $0.08

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSVMBD54DWT1G Features

  • Dual Schottky barrier diode array.
  • 30V maximum reverse voltage rating.
  • 200mA average rectified current per diode.
  • Fast 5ns reverse recovery time.
  • Surface-mount SOT-363 package.

NSVMBD54DWT1G Applications

  • High-speed switching circuits.
  • Voltage clamping and protection.
  • Signal detection and mixing.
  • Portable and handheld electronics.

NSVMBD54DWT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum reverse voltage of the NSVMBD54DWT1G?

The maximum reverse voltage (Vr) is 30V.

What is the forward current rating per diode?

The average rectified forward current per diode is 200mA.

What is the forward voltage drop at 100mA?

The maximum forward voltage is 1.0V at 100mA.

What is the reverse recovery time?

The reverse recovery time is 5ns.

What package does the NSVMBD54DWT1G come in?

It is available in a 6-TSSOP/SC-88/SOT-363 surface-mount package.

Is the NSVMBD54DWT1G RoHS compliant?

Yes, it is RoHS3 compliant and Pb-free, halogen-free/BFR-free.

What is the operating junction temperature range?

The maximum operating junction temperature is 125°C.

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