| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
126,000 pcs
|
126000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Diode Configuration | |
| Halogen Free | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Reverse Recovery Time (trr) | |
| SVHC Present | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Voltage |
The NSVM1MA152WKT1G is a dual common cathode silicon epitaxial planar switching diode from On Semiconductor, designed for ultra-high-speed switching applications. It is rated for a maximum reverse voltage of 80V and a forward current of 100mA per diode (150mA when both diodes are conducting). The device features a fast reverse recovery time of less than 3ns and a low diode capacitance of 2pF, making it suitable for high-frequency circuits.
The diode is housed in a compact SC-59 surface-mount package, ideal for low-power applications. It is Pb-free and RoHS compliant, and the NSV prefix indicates automotive qualification (AEC-Q101) and PPAP capability. The device operates over a temperature range of -55°C to 150°C with a maximum power dissipation of 200mW.
Typical applications include high-speed switching, logic circuits, and signal processing where fast switching and low capacitance are critical. The common cathode configuration simplifies PCB layout for dual-diode circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.44 | $0.44 |
| 10+ | $0.27 | $0.27 |
| 100+ | $0.17 | $0.17 |
| 500+ | $0.13 | $0.13 |
| 1,000+ | $0.11 | $0.11 |
| 3,000+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage is 80V.
The forward current is 100mA per diode (single) and 150mA when both diodes are conducting.
The maximum forward voltage is 1.2V at a forward current of 100mA.
The reverse recovery time is less than 3ns under test conditions of IF=10mA, VR=6V, RL=100Ω, Irr=0.1IR.
It is housed in an SC-59 surface-mount package.
The maximum diode capacitance is 2.0pF at VR=0V and f=1MHz.
The operating temperature range is -55°C to 150°C.