| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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72,000 pcs
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72000 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The NSVJ3557SA3T1G from On Semiconductor is an N-Channel Junction Field-Effect Transistor (JFET) designed for automotive applications, offering high gain performance in a compact package. It operates with a drain-to-source voltage of 15V and a drain current ranging from 10mA to 32mA.
Key electrical characteristics include a forward transfer admittance (|yfs|) of 35 mS and an input capacitance (Ciss) of 10 pF. The device also features a low noise figure (NF) of 1 dB, making it suitable for RF amplification and low-noise amplifier applications. The operating temperature range is -55°C to 150°C.
This JFET is housed in a surface-mount SC-59-3/CP3 package, enabling smaller and thinner device designs. It is Pb-Free and RoHS compliant, with AEC-Q101 qualification and PPAP capability, suitable for demanding automotive environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the NSVJ3557SA3T1G is 15 V.
The typical forward transfer admittance (|yfs|) of the NSVJ3557SA3T1G is 35 mS at 1 kHz.
The input capacitance (Ciss) of the NSVJ3557SA3T1G is 10 pF at 5V.
The operating junction and storage temperature range for the NSVJ3557SA3T1G is -55°C to +150°C.
The NSVJ3557SA3T1G is supplied in a TO-236-3, SC-59, SOT-23-3 package, specifically the SC-59-3/CP3 variant.