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NSVIMD10AMT1G The NSVIMD10AMT1G is a dual bias resistor transistor from ON Semiconductor, featuring NPN and PNP silicon transistors with monolithic bias resistor networks. It is designed for surface mount applications.
Mfr Part #:

NSVIMD10AMT1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NSVIMD10AMT1G is a dual bias resistor transistor from ON Semiconductor, featuring NPN and PNP silicon transistors with monolithic bias resistor networks. It is designed for surface mount applications.
✓ Total Stock: 40,020 pcs
$ Price Range: $0.99

NSVIMD10AMT1G Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Seba Components ✓
Non-Authorised Inventory information
33,000 pcs
On Request
33000 pcs On Request 1 On Request On Request On Request On Request On Request
Optech Co.,Limited ✓
Non-Authorised Inventory information
7,020 pcs
On Request
7020 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

NSVIMD10AMT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Junction Temperature
Mounting Type
Power
Power Dissipation
Resistor
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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NSVIMD10AMT1G Description

Short technical summary and product information.

The NSVIMD10AMT1G by ON Semiconductor is a dual bias resistor transistor, integrating both NPN and PNP silicon transistors with monolithic bias resistor networks. This surface mount device is housed in an SC-74R package and offers a high current capability of up to 500mA and a breakdown voltage of 50V.

 

Key electrical characteristics include a typical DC current gain (hFE) of 100 for the NPN transistor at 1mA/5V and 68 for the PNP transistor at 100mA/5V. The collector-emitter saturation voltage (VCEsat) is a maximum of 300mV at 1mA/10mA. The device also features integrated resistors with typical values of 70kΩ for the PNP input and 7.0kΩ for the NPN input, and a typical resistor ratio of 0.008.

 

With a power dissipation rating of 285mW at 25°C, a junction temperature of 150°C, and a storage temperature range of -55°C to +150°C, the NSVIMD10AMT1G is suitable for various electronic applications. It is Pb-Free, Halogen Free, and RoHS3 compliant, making it a reliable choice for modern designs.

NSVIMD10AMT1G Quick Information

Product Type: Transistor
Canonical Name: Dual Bias Resistor Transistor, NPN and PNP Silicon Surface Mount
Subcategory: Pre-Biased BJT Arrays

NSVIMD10AMT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSVIMD10AMT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSVIMD10AMT1G Features

  • Dual NPN and PNP pre-biased transistors.
  • Integrated monolithic bias resistor network.
  • Surface mount SC-74R package.
  • 500mA maximum continuous collector current.
  • 50V collector-emitter breakdown voltage.

NSVIMD10AMT1G Applications

  • Ideal for digital logic circuits.
  • Used in switching applications.
  • Suitable for signal amplification.
  • Simplifies circuit design.

NSVIMD10AMT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector current for the NSVIMD10AMT1G?

The maximum continuous collector current is 500mA.

What is the breakdown voltage of the NSVIMD10AMT1G?

The collector-emitter breakdown voltage is 50V, and the collector-base breakdown voltage is also 50V.

What is the typical DC current gain (hFE) for the NPN and PNP transistors?

The typical DC current gain is 100 for the NPN transistor at 1mA/5V and 68 for the PNP transistor at 100mA/5V.

What is the package type for the NSVIMD10AMT1G?

The device is supplied in an SC-74R package, which is also referred to as SC-74 or SOT-457.

Is the NSVIMD10AMT1G RoHS compliant?

Yes, the device is RoHS3 compliant.

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