NSVF5501SKT3G The On Semiconductor NSVF5501SKT3G is an NPN RF transistor designed for low noise amplifier applications. It offers a high cut-off frequency and gain in a compact package.
Mfr Part #:

NSVF5501SKT3G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NSVF5501SKT3G is an NPN RF transistor designed for low noise amplifier applications. It offers a high cut-off frequency and gain in a compact package.
Total Stock: 176,000 pcs
$ Price Range: $0.99

NSVF5501SKT3G Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
176,000 pcs
176000 pcs On Request 1 On Request On Request On Request On Request On Request

NSVF5501SKT3G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Current
Collector Dissipation
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Current
DC Current Gain (Minimum/Typical @ VCE=5 V, IC=10 mA)
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-to-Base Voltage
Forward Transfer Gain (Typical @ VCE = 5 V, IC = 20 mA, f = 1 GHz)
Forward Transfer Gain (Typical @ VCE = 5 V, IC = 20 mA, f = 400 MHz)
Frequency
Gain
Gain-Bandwidth Product
Halogen Free
Mounting Type
Noise Figure
Noise Figure (dB Typ @ f)
Operating Junction and Storage Temperature
Operating Temperature
Operating Voltage
Output Capacitance
Power
Reverse Transfer Capacitance
Supplier Device Package
Tape & Reel
Transistor Type
Voltage

NSVF5501SKT3G Description

Short technical summary and product information.

The On Semiconductor NSVF5501SKT3G is an NPN RF transistor specifically designed for low noise amplifier applications. It features a high cut-off frequency of 5.5 GHz typical and high gain, with a typical forward transfer gain of 11 dB at 1 GHz and 19 dB at 400 MHz.

 

This transistor operates with a collector current of up to 70 mA and a collector-emitter voltage of 10 V, dissipating up to 250 mW. It exhibits a low noise figure of 1.9 dB at 1 GHz.

 

The NSVF5501SKT3G is housed in a SOT-623F surface mount package, which is pin-compatible with the SOT-623 package, contributing to smaller application sizes. It is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.

 

Typical applications include RF amplifiers for Remote Keyless Entry (RKE), Advanced Driver-Assistance Systems (ADAS), and Remote Engine Starters.

NSVF5501SKT3G Quick Information

Product Type: RF Transistor
Canonical Name: NSVF5501SKT3G NPN RF Transistor
Subcategory: RF Bipolar Junction Transistor (BJT)

NSVF5501SKT3G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NSVF5501SKT3G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSVF5501SKT3G Features

  • High cut-off frequency of 5.5 GHz.
  • High gain up to 19 dB.
  • Low noise figure of 1.9 dB.
  • AEC-Q101 qualified for automotive.
  • Compact SOT-623F surface mount package.

NSVF5501SKT3G Applications

  • Used in RF amplifier circuits.
  • Suitable for RKE systems.
  • Applied in ADAS applications.
  • Features in remote engine starters.

NSVF5501SKT3G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the operating voltage for the NSVF5501SKT3G?

The operating voltage is 10 V.

What is the package type for this RF transistor?

The package type is SOT-623F.

What is the operating temperature range?

The operating temperature range is -55°C to +150°C.

Is the NSVF5501SKT3G RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the typical gain-bandwidth product?

The typical gain-bandwidth product is 5.5 GHz.

What is the typical noise figure at 1 GHz?

The typical noise figure is 1.9 dB.

Home
Account

Categories