| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7,525 pcs
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7525 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NSVF5488SKT3G from On Semiconductor is an NPN bipolar junction transistor (BJT) specifically designed for RF amplifier applications. It features a low noise figure of 1.0 dB typical at 1 GHz and a high gain of 12 dB typical at 1 GHz. The transistor has a high cut-off frequency (fT) of 7 GHz typical.
This device operates at a maximum collector-emitter voltage of 10 V and a maximum collector current of 70 mA, with a collector dissipation of 100 mW. It is suitable for applications requiring high-frequency amplification.
The NSVF5488SKT3G is housed in a compact SOT-623F surface-mount package, which is pin-compatible with the SOT-623 package. It is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications. The transistor is Pb-free, Halogen-free/BFR-free, and RoHS compliant.
Typical applications include RF amplifiers for RKE (Remote Keyless Entry), ADAS (Advanced Driver-Assistance Systems), remote engine starters, and UHF applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical noise figure for the NSVF5488SKT3G is 1.0 dB at 1 GHz.
The typical forward transfer gain (|S21e|²) for the NSVF5488SKT3G is 12 dB at 1 GHz.
The NSVF5488SKT3G has a maximum operating voltage of 10V.
The NSVF5488SKT3G is supplied in a SOT-623F surface mount package.
The operating temperature range for the NSVF5488SKT3G is -55°C to 150°C.