| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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41,460 pcs
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41460 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,050 pcs
|
1050 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This RF transistor from ON Semiconductor, part number NSVF4020SG4T1G, is engineered for low noise amplifier applications. It features a high gain-bandwidth product of 16 GHz and a typical noise figure of 1.2 dB at 1 GHz, making it suitable for demanding RF circuits.
The device operates with a collector-emitter voltage of up to 8V and a collector current of 150mA, with a power dissipation of 400mW. The operating temperature range is from -55°C to 150°C.
Packaged in an SC-82FL/MCPH4, this surface-mount transistor is designed for applications such as satellite radio and TV low noise amplifiers. It is AEC-Q101 qualified and PPAP capable for automotive use. The transistor is also Pb-Free, Halide Free, and RoHS Compliant.
Key electrical characteristics include a minimum DC current gain of 60 and a typical forward transfer gain of 17.5 dB at 1 GHz. The transistor type is NPN.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NSVF4020SG4T1G has a maximum collector-emitter voltage of 8V.
The NSVF4020SG4T1G is available in the SC-82FL/MCPH4 package.
The operating temperature range for the NSVF4020SG4T1G is -55°C to 150°C.
Yes, the NSVF4020SG4T1G is RoHS3 Compliant.
The typical noise figure for the NSVF4020SG4T1G at 1 GHz is 1.2 dB.
The typical gain-bandwidth product (fT) for the NSVF4020SG4T1G is 16 GHz.