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NSVEMX1DXV6T1G The NSVEMX1DXV6T1G is a dual NPN bipolar transistor from On Semiconductor designed for general purpose amplifier applications. It features a 50V collector-emitter breakdown voltage and is housed in a space-saving SOT-563 package.
Mfr Part #:

NSVEMX1DXV6T1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NSVEMX1DXV6T1G is a dual NPN bipolar transistor from On Semiconductor designed for general purpose amplifier applications. It features a 50V collector-emitter breakdown voltage and is housed in a space-saving SOT-563 package.
✓ Total Stock: 60,000 pcs
$ Price Range: $0.04

NSVEMX1DXV6T1G Available from 1 distributor

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✓ Non-Authorised
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60,000 pcs
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NSVEMX1DXV6T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
Supplier Device Package
Supplier Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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NSVEMX1DXV6T1G Description

Short technical summary and product information.

The On Semiconductor NSVEMX1DXV6T1G is a dual NPN general purpose amplifier transistor. It is designed for low power surface mount applications where board space is limited. This device offers a collector-emitter breakdown voltage of 50V and a continuous collector current of up to 100mA.

 

Key electrical characteristics include a DC current gain (hFE) ranging from 120 to 560 at 1mA and 6V, and a low VCE(sat) of 400mV at 5mA/50mA. The transition frequency (fT) is 180MHz at 2mA and 12V, with an output capacitance (COB) of 2pF at 1MHz.

 

The transistor operates over a wide temperature range of -55°C to 150°C. It is supplied in a SOT-563 package, suitable for surface mounting. The device is Pb-Free and Halogen Free, complying with RoHS standards.

NSVEMX1DXV6T1G Quick Information

Product Type: Transistor Array
Canonical Name: Dual NPN General Purpose Amplifier Transistor
Subcategory: Array

NSVEMX1DXV6T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSVEMX1DXV6T1G Estimated Pricing

Qty Low High
1+ $0.04 $0.04

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSVEMX1DXV6T1G Features

  • Dual NPN general purpose amplifier transistor.
  • 50V collector-emitter breakdown voltage.
  • 100mA continuous collector current.
  • High DC current gain (hFE) 120-560.
  • Compact SOT-563 surface mount package.

NSVEMX1DXV6T1G Applications

  • Suitable for general purpose amplification.
  • Ideal for low power applications.
  • Designed for space-constrained designs.
  • Used in surface mount circuits.

NSVEMX1DXV6T1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage?

The collector-emitter breakdown voltage is 50 Vdc.

What is the continuous collector current rating?

The continuous collector current is 100 mAdc.

What is the DC current gain (hFE) range?

The DC current gain (hFE) is between 120 and 560.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package is this transistor supplied in?

This transistor is supplied in a SOT-563, SOT-666 package.

Is this transistor RoHS compliant?

Yes, this transistor is RoHS3 Compliant.

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