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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
96,000 pcs
|
96000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Resistor | |
| Collector-Base Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Halogen Free | |
| Input Forward Voltage | |
| Input Reverse Voltage | |
| Mounting Type | |
| Package / Case | |
| Pb-Free | |
| Power | |
| Resistor | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NSVDTC123JET1G from ON Semiconductor is a digital transistor (BRT) designed to replace a single transistor and its external bias resistors. This NPN transistor integrates a monolithic bias network, consisting of a series base resistor (2.2 kΩ) and a base-emitter resistor (47 kΩ), simplifying circuit design and reducing board space.
Key electrical specifications include a collector-emitter voltage (VCEO) of 50V, a continuous collector current (IC) of 100mA, and a maximum power dissipation of 200mW. The DC current gain (hFE) is a minimum of 80 at 5mA/10V, with a Vce saturation of 250mV maximum at 1mA/10mA. The device supports an input forward voltage of 12Vdc and an input reverse voltage of 6Vdc.
This component is available in a surface mount package, specifically SC-75 or SOT-416. It is Pb-free and Halogen-free, complying with RoHS3 standards. The integration of resistors simplifies designs, making it suitable for applications where component count and board space are critical.
Designed for ease of use, the NSVDTC123JET1G eliminates the need for external bias components. Its robust specifications and compact package make it a versatile choice for various digital circuit applications requiring a pre-biased NPN transistor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the NSVDTC123JET1G is 50 Vdc.
The continuous collector current (IC) rating is 100 mAdc.
The maximum power dissipation for the NSVDTC123JET1G is 200 mW.
The NSVDTC123JET1G is available in SC-75 and SOT-416 packages, both for surface mounting.
Yes, the NSVDTC123JET1G is RoHS3 Compliant.