NSVDTC114YM3T5G

The NSVDTC114YM3T5G from ON Semiconductor is a digital transistor, also known as a Bias Resistor Transistor (BRT). This component integrates a single transistor with a monolithic bias network, consisting of a series base resistor and a base-emitter resistor, eliminating the need for external components. This integration simplifies circuit design, reduces component count, and saves board space.

Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 Vdc and a continuous collector current (IC) of 100 mAdc. The device has a maximum power dissipation of 260 mW at 25°C. It also features a DC current gain (hFE) of at least 80 at 5mA/10V and a Vce saturation of 250mV maximum at 300µA/10mA.

The transistor is housed in a SOT-723 surface-mount package. It is designed to replace a single device and its external resistor bias network, offering a cost-effective solution for various applications. The device is Pb-free and Halogen-free.

This series is suitable for applications requiring simplified circuitry and reduced component count. The S and NSV prefix variants are AEC-Q101 qualified and PPAP capable for automotive and other demanding applications.