| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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459,000 pcs
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459000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NSVDTC113EM3T5G from On Semiconductor is a single, pre-biased NPN bipolar junction transistor (BJT) designed for efficient circuit integration. This device features a monolithic bias network, simplifying circuit design and reducing component count.
Key electrical characteristics include a maximum collector-emitter voltage of 50 Vdc and a continuous collector current of 100 mAdc. It has a power dissipation rating of 260 mW and a base resistor (R1) of 1 kΩ. The DC current gain (hFE) is a minimum of 3 at 5mA collector current and 10V Vce, with a Vce saturation of 250mV maximum at 5mA base current and 10mA collector current.
This transistor is housed in a compact SOT-723 surface mount package, making it suitable for space-constrained applications. The mounting type is surface mount, and the supplier device package is also SOT-723.
Designed to replace single devices and external resistor bias networks, the NSVDTC113EM3T5G offers advantages in reduced board space and component count. It is suitable for various digital and switching applications where integrated biasing is beneficial.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 50 Vdc.
The continuous collector current is 100 mAdc.
The package type is SOT-723.
It is designed for surface mount.
The base resistor (R1) is 1 kΩ.
The minimum DC current gain (hFE) is 3 at 5mA collector current and 10V Vce.