| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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66,000 pcs
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66000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Halogen Free | |
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| Resistor | |
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| Vce Saturation (Max) @ Ib, Ic | |
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The NSVDTA115EET1G from ON Semiconductor is a PNP Pre-Biased Transistor (BRT) designed to integrate a single transistor with a monolithic bias resistor network, reducing component count and board space. This device features a collector-emitter voltage (Vceo) of 50V and a continuous collector current (Ic) of 100mA, with a maximum power dissipation of 200mW.
Key electrical characteristics include a minimum DC current gain (hFE) of 80 at 5mA/10V and a Vce saturation of 250mV at 300µA/10mA. The internal resistors have a value of 100 kΩ. The transistor is housed in a compact SC-75, SOT-416 surface mount package.
This series simplifies circuit design by eliminating external bias resistors. The device is suitable for applications requiring reduced component count and board space. It is specified as RoHS3 Compliant, MSL 1, and REACH Unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vceo) for the NSVDTA115EET1G is 50 Vdc.
The continuous collector current (Ic) is rated at 100 mA.
The maximum power dissipation (Pd) for this transistor is 200 mW.
It is a PNP Pre-Biased Transistor.
The transistor is supplied in an SC-75, SOT-416 surface mount package.
Yes, the NSVDTA115EET1G is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.