NSVDTA114YM3T5G

This On Semiconductor NSVDTA114YM3T5G is a PNP digital transistor featuring a monolithic bias resistor network. This integrated design simplifies circuit construction by replacing discrete resistors and a single transistor, leading to reduced component count and smaller board footprints.

The device operates with a maximum collector-emitter voltage of 50 Vdc and a continuous collector current of 100 mAdc. It includes internal resistors with nominal values of 10 kΩ (series base) and 47 kΩ (base-emitter), simplifying external circuitry. The transistor type is PNP Pre-Biased, with a typical DC current gain (hFE) of 80 at 5mA and 10V, and a Vce saturation of 250mV at 300µA and 10mA.

Packaged in a compact SOT-723 surface mount case, this component is suitable for applications where space is a constraint. It is rated for 260 mW of power dissipation. The device is Pb-Free and Halogen Free, aligning with environmental compliance standards.

Key electrical characteristics include a maximum input forward voltage of 40 Vdc and a maximum input reverse voltage of 6 Vdc. The NSVDTA114YM3T5G is designed to replace single devices and their external bias networks, offering a cost-effective and space-saving solution for various electronic designs.