| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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63,710 pcs
|
63710 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Halogen Free | |
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| Resistor | |
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| Vce Saturation (Max) @ Ib, Ic | |
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The ON Semiconductor NSVDTA114EM3T5G is a PNP Digital Transistor (BRT) that integrates a transistor with a monolithic bias resistor network. This design simplifies circuit construction, reduces board space, and lowers component count.
Key electrical specifications include a collector-emitter voltage of 50 Vdc and a continuous collector current of 100 mAdc. The device has a maximum power dissipation of 260 mW. It features a DC current gain (hFE) of 35 (min) at 5mA and 10V, and a Vce saturation of 250mV (max) at 300µA and 10mA.
The transistor type is PNP - Pre-Biased, with integrated resistors of 10 kΩ. It is supplied in a compact SOT-723 surface mount package.
This series is designed to replace a single device and its external resistor bias network, offering a cost-effective solution for various applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 50 Vdc.
The continuous collector current is 100 mAdc.
The NSVDTA114EM3T5G is supplied in a SOT-723 package.
This component is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The integrated resistors are 10 kΩ.