NSVDTA114EET1G The ON Semiconductor NSVDTA114EET1G is a PNP Pre-Biased Transistor designed for simplified circuit design and reduced board space. It offers a 50V collector-emitter voltage and 100mA continuous collector current.
Mfr Part #:

NSVDTA114EET1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NSVDTA114EET1G is a PNP Pre-Biased Transistor designed for simplified circuit design and reduced board space. It offers a 50V collector-emitter voltage and 100mA continuous collector current.
✓ Total Stock: 381,260 pcs
$ Price Range: $0.99

NSVDTA114EET1G Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
380,260 pcs
380260 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,000 pcs
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NSVDTA114EET1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Supplier Device Package
Supplier Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

NSVDTA114EET1G Description

Short technical summary and product information.

The NSVDTA114EET1G from ON Semiconductor is a PNP type digital transistor featuring a monolithic bias resistor network. This integrated design simplifies circuit construction by replacing discrete resistors and a transistor, leading to reduced component count and smaller board footprints.

 

Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 100mA. The device also has a maximum power dissipation of 200mW. It incorporates internal resistors with nominal values of 10 kΩ for both the base resistor (R1) and the base-emitter resistor (R2).

 

This transistor is supplied in an SC-75 package, suitable for surface mounting. The design is Pb-Free and Halogen Free, complying with RoHS standards. Its integrated bias network makes it suitable for applications where circuit simplification and space saving are critical.

 

Additional electrical characteristics include a minimum DC current gain (hFE) of 35 at 5mA/10V and a maximum Vce saturation of 250mV at 300µA/10mA. The input forward voltage is rated at 40Vdc, and the input reverse voltage is 10Vdc.

NSVDTA114EET1G Quick Information

Product Type: Transistor
Canonical Name: PNP Digital Transistor (BRT)
Subcategory: Transistors - Bipolar (BJT) - Single, Pre-Biased

NSVDTA114EET1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NSVDTA114EET1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSVDTA114EET1G Features

  • PNP Pre-Biased Transistor for circuit simplification.
  • Rated for 50V collector-emitter voltage.
  • Handles 100mA continuous collector current.
  • Integrated 10 kΩ bias resistors.
  • Surface-mount SC-75 package.

NSVDTA114EET1G Applications

  • Ideal for digital logic circuits.
  • Reduces component count in designs.
  • Saves board space effectively.
  • Suitable for low-power applications.

NSVDTA114EET1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NSVDTA114EET1G?

The maximum collector-emitter voltage (VCEO) for the NSVDTA114EET1G is 50 Vdc.

What is the continuous collector current rating?

The continuous collector current (IC) rating for the NSVDTA114EET1G is 100 mAdc.

What is the package type for this transistor?

This transistor is supplied in an SC-75 package.

Is the NSVDTA114EET1G RoHS compliant?

Yes, the NSVDTA114EET1G is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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