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NSVDTA113EM3T5G The On Semiconductor NSVDTA113EM3T5G is a PNP Pre-Biased Transistor. It features a 50V collector-emitter voltage and 100mA continuous collector current.
Mfr Part #:

NSVDTA113EM3T5G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NSVDTA113EM3T5G is a PNP Pre-Biased Transistor. It features a 50V collector-emitter voltage and 100mA continuous collector current.
✓ Total Stock: 9,020 pcs
$ Price Range: $0.99

NSVDTA113EM3T5G Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
9,020 pcs
On Request
9020 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

NSVDTA113EM3T5G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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NSVDTA113EM3T5G Description

Short technical summary and product information.

The On Semiconductor NSVDTA113EM3T5G is a PNP type Bipolar Junction Transistor (BJT) with an integrated monolithic bias resistor network. This design simplifies circuit design and reduces board space by replacing discrete components. It operates with a maximum collector-emitter voltage of 50Vdc and a continuous collector current of 100mAdc.

 

The transistor is housed in a compact SOT-723 surface mount package, making it suitable for space-constrained applications. Key electrical characteristics include a nominal base resistor (R1) and emitter-base resistor (R2) of 1 kΩ each, a minimum DC current gain (hFE) of 3 at 5mA/10V, and a maximum Vce saturation of 250mV at 5mA/10mA. The maximum power dissipation is 260mW.

 

This device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant, indicating adherence to environmental standards. The "S" and "NSV" prefixes denote suitability for automotive and other applications requiring unique site and control change requirements, with AEC-Q101 qualification and PPAP capability.

NSVDTA113EM3T5G Quick Information

Product Type: PNP Transistor
Canonical Name: PNP Transistor with Monolithic Bias Resistor Network
Subcategory: Single, Pre-Biased

NSVDTA113EM3T5G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSVDTA113EM3T5G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSVDTA113EM3T5G Features

  • PNP Pre-Biased Bipolar Transistor.
  • 50V Collector-Emitter Voltage.
  • 100mA Continuous Collector Current.
  • Integrated 1kΩ bias resistors.
  • SOT-723 Surface Mount Package.

NSVDTA113EM3T5G Applications

  • Simplifies circuit design.
  • Reduces component count.
  • Reduces board space.
  • Suitable for automotive applications.

NSVDTA113EM3T5G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NSVDTA113EM3T5G?

The maximum collector-emitter voltage is 50 Vdc.

What is the continuous collector current rating?

The continuous collector current is 100 mAdc.

What is the power dissipation of the NSVDTA113EM3T5G?

The maximum power dissipation is 260 mW.

What is the package type for this transistor?

The transistor is supplied in a SOT-723 package.

Is the NSVDTA113EM3T5G RoHS compliant?

Yes, the NSVDTA113EM3T5G is RoHS3 Compliant.

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