| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,635 pcs
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3635 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This NSVBT2222ADW1T1G from ON Semiconductor is a dual NPN silicon transistor. It is designed for general-purpose applications and features a maximum collector-emitter voltage (VCEO) of 40V and a continuous collector current (IC) of 600mA.
The transistor operates within a wide temperature range of -55°C to 150°C (TJ). It has a DC current gain (hFE) of 100 at 150mA and 10V, and a transition frequency (fT) of 300MHz.
The device is housed in a compact SC-88/SC70-6/SOT-363 surface-mount package, making it suitable for space-constrained designs. It is also RoHS3 compliant, lead-free, and halogen-free.
Key electrical characteristics include a saturation voltage (Vce Sat) of 1V at 50mA/500mA and a leakage current (ICBO) of 0.01mA at 60V.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the NSVBT2222ADW1T1G is 40 Vdc.
The continuous collector current (IC) is rated at 600 mAdc.
The operating temperature range is -55°C to 150°C (TJ).
This transistor is supplied in the SC-88/SC70-6/SOT-363 package.
Yes, the NSVBT2222ADW1T1G is RoHS3 Compliant.