NSVBSS63LT1G The NSVBSS63LT1G is a PNP bipolar junction transistor rated for 100V and 0.1A, designed in a SOT23-3 package for surface mounting applications.
Mfr Part #:

NSVBSS63LT1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NSVBSS63LT1G is a PNP bipolar junction transistor rated for 100V and 0.1A, designed in a SOT23-3 package for surface mounting applications.
Total Stock: 3,656 pcs
$ Price Range: $0.99

NSVBSS63LT1G Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,828 pcs
1828 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,828 pcs
1828 pcs On Request 1 On Request On Request On Request On Request On Request

NSVBSS63LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Breakdown Voltage (Minimum @ IC = -10 mAdc, RBE = 10 kΩ)
Breakdown Voltage (Minimum @ IC = -100 mAdc)
Breakdown Voltage (Minimum @ IE = -10 mAdc)
Current
Current (Maximum)
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Leakage Current (Maximum @ VCB = -90 Vdc, IE = 0)
Leakage Current (Maximum @ VCE = -110 Vdc, RBE = 10 kΩ)
Leakage Current (Maximum @ VEB = 6.0 Vdc, IC = 0)
Mounting Type
Operating Temperature
Power
Power Dissipation (Maximum @ Alumina Substrate, TA = 25 °C)
Power Dissipation (Maximum @ FR -5 Board, TA = 25 °C)
Saturation Voltage (Maximum @ IC = -25 mAdc, IB = -2.5 mAdc)
Supplier Device Package
Thermal Resistance (Typical @ Junction to Ambient)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
Voltage - Maximum
gain (Minimum @ IC = -25 mAdc, VCE = -1.0 Vdc)
gain (Minimum @ IC = 10 mAdc, VCE = 1.0 Vdc)
gain (Minimum @ Ic=25 mA, Vce=1 V)
voltage (Minimum @ RBE = 10 kΩ)

NSVBSS63LT1G Description

Short technical summary and product information.

The NSVBSS63LT1G is a PNP bipolar junction transistor manufactured by On Semiconductor. It is rated for a collector-emitter voltage of 100V and a collector current of 0.1A. The device features a SOT23-3 package, making it suitable for surface-mount applications in various electronic circuits. It is used in switching and amplification circuits where high voltage and low current operation are required. The transistor's electrical characteristics include a minimum DC current gain of 30 and a collector-emitter saturation voltage of -250 mV at specified test conditions. Its thermal ratings include a maximum power dissipation of 225 mW on a FR-5 board and 300 mW on an alumina substrate, with junction-to-ambient thermal resistances of 556 °C/W and 417 °C/W respectively. The operating temperature range extends from -55°C to 150°C, making it suitable for a wide range of environmental conditions.

NSVBSS63LT1G Quick Information

Product Type: Transistor
Canonical Name: Transistor - Bipolar (BJT) - Single

NSVBSS63LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSVBSS63LT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSVBSS63LT1G Features

  • Rated for 100V collector-emitter voltage
  • Maximum collector current of 0.1A
  • SOT23-3 surface-mount package
  • Minimum DC gain of 30
  • Operating temperature range from -55°C to 150°C

NSVBSS63LT1G Applications

  • Used in high-voltage switching circuits
  • Suitable for low-current amplification tasks
  • Ideal for surface-mount device designs
  • Applicable in automotive and industrial electronics

NSVBSS63LT1G FAQs

3 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the NSVBSS63LT1G?

The maximum collector-emitter voltage is 100V.

What package type does the NSVBSS63LT1G use?

It uses a SOT23-3 surface-mount package.

What is the operating temperature range for the NSVBSS63LT1G?

-55°C to 150°C.

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