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NSVBSS63LT1G The NSVBSS63LT1G is a PNP bipolar junction transistor rated for 100V and 0.1A, designed in a SOT23-3 package for surface mounting applications.
Mfr Part #:

NSVBSS63LT1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NSVBSS63LT1G is a PNP bipolar junction transistor rated for 100V and 0.1A, designed in a SOT23-3 package for surface mounting applications.
✓ Total Stock: 3,656 pcs
$ Price Range: $0.99

NSVBSS63LT1G Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Braun Electronic Components ✓
Non-Authorised Inventory information
1,828 pcs
On Request
1828 pcs On Request 1 On Request On Request On Request On Request On Request
MW.FEP S.p.A. ✓
Non-Authorised Inventory information
1,828 pcs
On Request
1828 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

NSVBSS63LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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NSVBSS63LT1G Description

Short technical summary and product information.

The NSVBSS63LT1G is a PNP bipolar junction transistor manufactured by On Semiconductor. It is rated for a collector-emitter voltage of 100V and a collector current of 0.1A. The device features a SOT23-3 package, making it suitable for surface-mount applications in various electronic circuits. It is used in switching and amplification circuits where high voltage and low current operation are required. The transistor's electrical characteristics include a minimum DC current gain of 30 and a collector-emitter saturation voltage of -250 mV at specified test conditions. Its thermal ratings include a maximum power dissipation of 225 mW on a FR-5 board and 300 mW on an alumina substrate, with junction-to-ambient thermal resistances of 556 °C/W and 417 °C/W respectively. The operating temperature range extends from -55°C to 150°C, making it suitable for a wide range of environmental conditions.

NSVBSS63LT1G Quick Information

Product Type: Transistor
Canonical Name: Transistor - Bipolar (BJT) - Single

NSVBSS63LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSVBSS63LT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSVBSS63LT1G Features

  • Rated for 100V collector-emitter voltage
  • Maximum collector current of 0.1A
  • SOT23-3 surface-mount package
  • Minimum DC gain of 30
  • Operating temperature range from -55°C to 150°C

NSVBSS63LT1G Applications

  • Used in high-voltage switching circuits
  • Suitable for low-current amplification tasks
  • Ideal for surface-mount device designs
  • Applicable in automotive and industrial electronics

NSVBSS63LT1G FAQs

3 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the NSVBSS63LT1G?

The maximum collector-emitter voltage is 100V.

What package type does the NSVBSS63LT1G use?

It uses a SOT23-3 surface-mount package.

What is the operating temperature range for the NSVBSS63LT1G?

-55°C to 150°C.

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