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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,000 pcs
|
7000 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Pb-Free | |
| Power | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NSVBCP69T1G is a PNP Silicon Epitaxial Transistor manufactured by ON Semiconductor, designed for low voltage and high current applications. This device features a maximum collector current of 1A and a collector-emitter voltage of 20V.
The transistor is supplied in a SOT-223 package, which is suitable for medium power surface mount applications. The SOT-223 package ensures level mounting for improved thermal conduction and allows for visual inspection of soldered joints. Its formed leads absorb thermal stress during soldering, preventing damage to the die.
Key electrical characteristics include a DC current gain (hFE) of 85 minimum at 500mA and 1V, and a Vce saturation of 500mV maximum at 100mA and 1A. The device operates at a maximum frequency of 60MHz.
This transistor is AEC-Q101 qualified and PPAP capable, with an NSV prefix indicating unique site and control change requirements for automotive and other applications. It is also Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current is 1A.
The collector-emitter voltage rating is 20V.
The operating temperature range is -65°C to 150°C.
The NSVBCP69T1G is supplied in a SOT-223 (TO-261) package.
Yes, the NSVBCP69T1G is RoHS3 Compliant.