NSVBCP69T1G The NSVBCP69T1G is a PNP Silicon Epitaxial Transistor from ON Semiconductor designed for low voltage, high current applications. It is housed in a SOT-223 package.
Mfr Part #:

NSVBCP69T1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NSVBCP69T1G is a PNP Silicon Epitaxial Transistor from ON Semiconductor designed for low voltage, high current applications. It is housed in a SOT-223 package.
Total Stock: 7,000 pcs
$ Price Range: $0.99

NSVBCP69T1G Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
7,000 pcs
7000 pcs On Request 1 On Request On Request 11+ On Request On Request

NSVBCP69T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Pb-Free
Power
Supplier Device Package
Supplier Package
Tape & Reel
Thermal Resistance Junction-to-Ambient
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

NSVBCP69T1G Description

Short technical summary and product information.

The NSVBCP69T1G is a PNP Silicon Epitaxial Transistor manufactured by ON Semiconductor, designed for low voltage and high current applications. This device features a maximum collector current of 1A and a collector-emitter voltage of 20V.

 

The transistor is supplied in a SOT-223 package, which is suitable for medium power surface mount applications. The SOT-223 package ensures level mounting for improved thermal conduction and allows for visual inspection of soldered joints. Its formed leads absorb thermal stress during soldering, preventing damage to the die.

 

Key electrical characteristics include a DC current gain (hFE) of 85 minimum at 500mA and 1V, and a Vce saturation of 500mV maximum at 100mA and 1A. The device operates at a maximum frequency of 60MHz.

 

This transistor is AEC-Q101 qualified and PPAP capable, with an NSV prefix indicating unique site and control change requirements for automotive and other applications. It is also Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.

NSVBCP69T1G Quick Information

Product Type: PNP Transistor
Series: BCP69
Canonical Name: NSVBCP69T1G PNP Silicon Epitaxial Transistor
Subcategory: Bipolar Transistor

NSVBCP69T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSVBCP69T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSVBCP69T1G Features

  • PNP Silicon Epitaxial Transistor.
  • Designed for low voltage, high current.
  • 1A continuous collector current.
  • 20V collector-emitter voltage.
  • SOT-223 surface mount package.

NSVBCP69T1G Applications

  • Used in switching applications
  • Suitable for amplification circuits
  • Ideal for space-constrained designs
  • Automated assembly with tape and reel

NSVBCP69T1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector current for the NSVBCP69T1G?

The maximum collector current is 1A.

What is the collector-emitter voltage rating of the NSVBCP69T1G?

The collector-emitter voltage rating is 20V.

What is the operating temperature range for this transistor?

The operating temperature range is -65°C to 150°C.

What package type is the NSVBCP69T1G supplied in?

The NSVBCP69T1G is supplied in a SOT-223 (TO-261) package.

Is the NSVBCP69T1G RoHS compliant?

Yes, the NSVBCP69T1G is RoHS3 Compliant.

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