| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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48 pcs
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48 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
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| Vce Saturation (Max) @ Ib, Ic | |
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The On Semiconductor NSVBCP68T1G is an NPN silicon epitaxial transistor designed for low voltage, high current applications. It is housed in a SOT-223 package, suitable for medium power surface mount applications.
Key electrical characteristics include a collector-emitter voltage (VCEO) of 20V, a continuous collector current (IC) of 1A, and a peak collector current (ICM) of 3A. The device offers a DC current gain (hFE) of 85 minimum at 500mA and 1V, and a saturation voltage (Vce) of 500mV maximum at 100mA and 1A. Its frequency response reaches up to 60MHz.
The transistor operates within a temperature range of -65°C to 150°C. The SOT-223 package ensures level mounting for improved thermal conduction and allows for visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, preventing damage to the die. This device is Pb-Free and Halogen Free, complying with RoHS standards.
This transistor is suitable for various electronic circuits requiring efficient current handling in a compact surface-mount form factor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the NSVBCP68T1G is 20 Vdc.
The continuous collector current (IC) rating for the NSVBCP68T1G is 1 Adc.
The operating and storage temperature range for this transistor is -65°C to 150°C.
The NSVBCP68T1G is supplied in a SOT-223 (TO-261) package, designed for surface mounting.
Yes, the NSVBCP68T1G is RoHS3 Compliant.