NSVBCH807-40LT1G The NSVBCH807-40LT1G is a PNP silicon transistor from ON Semiconductor. It features a 45V collector-emitter voltage and 500mA continuous collector current.
Mfr Part #:

NSVBCH807-40LT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NSVBCH807-40LT1G is a PNP silicon transistor from ON Semiconductor. It features a 45V collector-emitter voltage and 500mA continuous collector current.
Total Stock: 54,000 pcs
$ Price Range: $0.99

NSVBCH807-40LT1G Available from 1 distributor

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NSVBCH807-40LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base-Emitter On Voltage
Collector - Emitter Saturation Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Output Capacitance
Pb-Free
Power
Power Dissipation (Maximum @ Alumina Substrate, TA = 25 °C)
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
current (Maximum @ Peak)

NSVBCH807-40LT1G Description

Short technical summary and product information.

The NSVBCH807-40LT1G is a PNP silicon transistor manufactured by ON Semiconductor. It is designed for general-purpose applications and is rated for a maximum collector-emitter voltage of 45V and a continuous collector current of 500mA.

 

This transistor operates over a wide temperature range from -55°C to 175°C (TJ), making it suitable for high-temperature applications. It has a DC current gain (hFE) of 250 at 100mA and 1V, and a current-gain bandwidth product (fT) of 100MHz.

 

The device is supplied in a compact SOT-23-3 (TO-236) surface-mount package, facilitating integration into compact electronic designs. It is Pb-Free and Halogen Free, complying with modern environmental standards.

NSVBCH807-40LT1G Quick Information

Product Type: PNP Silicon Transistor
Canonical Name: NSVBCH807-40LT1G PNP Silicon Transistor
Subcategory: Bipolar (BJT) - Single

NSVBCH807-40LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSVBCH807-40LT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSVBCH807-40LT1G Features

  • PNP silicon transistor for general applications.
  • Rated for 45V collector-emitter voltage.
  • Handles 500mA continuous collector current.
  • Operates from -55°C to 175°C.
  • Surface mount SOT-23-3 package.

NSVBCH807-40LT1G Applications

  • Suitable for high-temperature applications.
  • General purpose switching and amplification.
  • Compact designs requiring surface mount.
  • Automotive and mission-critical uses.

NSVBCH807-40LT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NSVBCH807-40LT1G?

The maximum collector-emitter voltage (VCEO) for the NSVBCH807-40LT1G is -45 V.

What is the continuous collector current rating of the NSVBCH807-40LT1G?

The continuous collector current (IC) for the NSVBCH807-40LT1G is 500 mA.

What is the operating temperature range for the NSVBCH807-40LT1G transistor?

The NSVBCH807-40LT1G transistor can operate in a temperature range of -55°C to 175°C (TJ).

What package type is the NSVBCH807-40LT1G supplied in?

The NSVBCH807-40LT1G is supplied in a SOT-23-3 (TO-236) surface-mount package.

Is the NSVBCH807-40LT1G RoHS compliant?

Yes, the NSVBCH807-40LT1G is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the NSVBCH807-40LT1G?

The Moisture Sensitivity Level (MSL) for the NSVBCH807-40LT1G is 1 Unlimited.

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